Karakterisasi Lapisan Film Tipis GaAs Yang Ditumbuhkan Dengan Metode MOCVD Di Atas Substrate Ge
DAFTAR PUSTAKA
A. Mooradian and G. B. Wright, 1966 “First Order Raman Effect in III-IV
Compound” Solid State Communications Vol. 4 : 431-434.
Anthony C. Jones, and Michael L.M., 2009 “Chemical vapour deposition :
precursors, processes and applications” Royal Society of Chemistry, Cambridge,
UK.
A. Suhandi, H. Sutanto, P. Arifin, M. Budiman, dan M. Barmawi, 2005
“Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD
Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic)”
Jurnal Matematika dan Sains, Vol. 10 No. 1 : 11-15.
B. Galiana, I. Rey-Stolle, C. Algora, K. Volz, and W. Stolz, 2009 “A GaAs
metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from
the Ge substrate” Applied Physics Letters 92, 152102 : 1-3
Budi Mulyanti, Dedi Rusdiana, dan Pepen Arivin, 2007 “Studi penumbuhan
GaN-Mn di atas substrate silicon dengan metode plasma assited metal organic
chemical vapor deposition” Jurnal Sains Material Indonesia, Edisi Khusus : 209214.
D. Olego and M. Cardona, 1981 “Raman scattering by coupled LO-phononplasmon modes and forbidden TO-phonon Raman scattering in heavily doped ptype GaAs” Physical Review B, Vol.24, No.12 : 7217-7232.
Devki N. Talwar, 2010 “Direct evidence of LO phonon-plasmon coupled modes
in n-GaN” Applied Physics Letters 97, 051902 : 1-3
100
Universitas Sumatera Utara
Fred
H.
Pollak
and
H.
Shen,
1993
“Modulation
spectroscopy
of
semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices”
Materials Science and Engineering R10, Nos. 7-,8 : 275-274
George N. Maracas and Dieter K. Schroder, 1989 “Electrical Characterization
of Semiconductor Materials and Devices” William Andrew Publishing.
G. B. Stringfellow, 1998 “Organometallic Vapor-Phase Epitaxy, Second Edition:
Theory and Practice” 2nd edition, Academic Press.
G. Brammertz, M. Caymax, M. Meuris, M. Heyns, Y. Mols, S. Degroote, M.
Leys, 2008 “GaAs on Ge for CMOS” Thin Solid Films 517 : 148–151.
Guy Brammertz, Yves Mols, Stefan Degroote, Maarten Leys, Jan Van
Steenbergen, Gustaaf Borghs, Matty Caymax, 2006 “Selective epitaxial
growth of GaAs on Ge by MOCVD” Journal of Crystal Growth 297 : 204–210.
Guy Brammertz, Matty R. Caymax, Yves Mols, Stefan Degroote, Maarten
Leys, Jan Van Steenbergen, Gillis Winderickx, Gustaaf Borghs and Marc M.
Meuris, 2006 “Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2
Pattern” Electrochemical Society Trans., Vol. 3, Issue 7 : 585-591.
Guy Brammertz, Yves Mols, Stefan Degroote, Vasyl Motsnyi, Maarten Leys,
Gustaaf
Borghs,
and
Matty
Caymax,
2006
“Low
temperature
photoluminescence study of thin epitaxial GaAs films on Ge substrates” Journal
of Applied Physics 99, 093514 : 1-10.
Guy Brammertz, Yves Mols, Stefan Degroote, Maarten Leys, Jan Van
Steenbergen, Gustaaf Borghs, Matty Caymax, 2006 “Selective epitaxial
growth of GaAs on Ge by MOCVD” Journal of Crystal Growth 297 : 204–210.
101
Universitas Sumatera Utara
Guang-Li Luo, Yen-Chang Hsieh, Edward Yi Chang, M. H. Pilkuhn, ChaoHsin Chien, Tsung-Hsi Yang, Chao-Ching Cheng, and Chun-Yen Chang,
2007 “High-speed GaAs metal gate semiconductor field effect transistor structure
grown on a composite Ge/GexSi1−x /Si substrate” J. Appl. Phys. 101, 084501 : 1-6.
Herbert Kroemer, 1987 “Polar on nonpolar epitaxy” Journal of Crystal Growth
81 : 193-204.
H. Kressel and M. Ettenberg, 1973 “Electroluminescence and photoluminescen
ce of GaAs : Ge prepared by liquid phase epitaxy” Appl. Phys. Lett. Vol. 23,
N0.9: 511-513.
H. Mathieu, J. Allegre, and B. Gil, 1991 “Piezomodulation spectroscopy: A
powerful investigation tool of heterostructures” Physical Review B, Vol.43, No.3
: 2218-2227.
H. Shen, Fred H. Pollak, and R. N. Sacks, 1985 “Raman scattering
determination of freecarrier concentration and surface spacecharge layer in 100
nGaAs” Appl. Phys. Lett. 47 (8) : 891-893.
H. W. Yu, E. Y. Chang, Y. Yamamoto, B. Tillack, W. C. Wang, C. I. Kuo, Y.
Y. Wong, and H. Q. Nguyen, 2011 “Effect of graded-temperature arsenic
prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase
epitaxy” Appl. Phys. Lett. 99, 171908 : 1-3.
H. W. Yu, E. Y. Chang, H. Q. Nguyen, J. T. Chang, C. C. Chung, C. I. Kuo,
Y. Y. Wong, and W. C. Wang, 2010 “Effect of substrate misorientation on the
material properties of GaAs/Al0.3Ga0.7As tunnel diodes” Appl. Phys. Lett. 97,
231903 : 1-3.
102
Universitas Sumatera Utara
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G.
Abstreiter, and A. Fontcuberta i Morral, 2009 “Raman spectroscopy of
wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection
rules, and strain effects” Physical Review B 80, 245324: 1-11.
J. Derluyna, K. Dessein, G. Flamand, Y. Mols, J. Poortmans, G. Borghs, and
I. Moerman, 2003 “Comparison of MOVPE grown GaAs solar cells using
different substrates and group-V precursors” Journal of Crystal Growth 247:
237–244.
J. Díaz-Reyes, 2010 “Raman scattering and electrical characterization of
AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD” Sociedad
Mexicana de Ciencia y Tecnología de Superficies y Materiales, Superficies y
Vacío 23 (1) : 13-17.
J. D. Wu, Y. S. Huang, G. Brammertz, and K. K. Tiong, 2009 “Optical
characterization of thin epitaxial GaAs films on Ge substrates” J. Appl. Phys.
106, 023505 : 1-5.
J. H. Parker, JR., D. W. Feldman, and M. Ashkin, 1997 “Raman Scattering by
Silicon and Germanium” , Physical Review, Volume 155, No.3:712-714.
J. Z. Li, J.Bai, J.M.Hydrick, J.S.Park, C.Major, M.Carroll, J.G.Fiorenza, A.
Lochtefeld, 2009 “Growth and characterization of GaAs layers on polished
Ge/Si by selective aspect ratio trapping” Journal of Crystal Growth 311 : 3133 –
3137.
L. Knuuttila, A. Lankinen, J. Likonen, H. Lipsanen, X. Lu, P. Mcnally, J.
Riikonen, and T. Tuomi, 2005 “Low Temperature Growth GaAs on Ge”
Japanese Journal of Applied Physics, Vol. 44, No. 11 : 7777–7784.
103
Universitas Sumatera Utara
Masafumi Yamaguchi, Tatsuya Takamoto, and Kenji Arakia, 2006 “Super
high-efficiency multi-junction and concentrator solar cells” Solar Energy
Materials & Solar Cells 90 : 3068–3077.
O V Misochko and T N Fursova, 2005 “Coupled phonon–plasmon modes in
indium phosphide observed by an ultrafast pump–probe technique” J. Phys.:
Condens. Matter 17, 5577 : 17-26.
Pallab
Bhattacharya,
Weidong
Zhou,
Donghai
Zhu,
and
Jayshri
Sabarinathan, 1999 “Photonic stopbands and light transmission characteristics
in GaAs-based three dimensional waveguides with large index contrast” Applied
Physical Letters, Vol.75, No.12 : 1670-1672.
Peter Y. Yu and Manuel Cardona, 2010 “Fundamentals of Semiconductors:
Physics and Materials Properties” Springer Heidelberg Dordrecht London New
York, Fourth Edition : 376-382.
Raffaello Ferone, John R. Wallbank, Viktor Zólyomi, Edward McCanna,
and Vladimir I. Fal’ko, 2011 “Manifestation of LO–LA phonons in Raman
scattering in grapheme” Solid State Communications 151: 1071–1074.
Richard L. Tober and John D. Bruno, 1990 “Modulation effects near the GaAs
absorption edge” J. Appl. Phys. 68 (12) ; 6388 – 6392.
R. A. Mun˜oz-Herna´ndez, S. Jime´nez-Sandoval, G. Torres-Delgado, C.
Roch, X. K. Chen, and J. C. Irwin, 1966 “Light scattering in p-type GaAs:Ge”
J. Appl. Phys. 80 : 2388-2395.
R. Tyagi, M. Singh, M. Thirumavalavan, T. Srinivasan, and S.K. Agarwal,
2002 “The Influence of As and Ga Prelayers on the Metal-Organic Chemical
Vapor Deposition of GaAs/Ge” Journal of Electronic Materials, Vol. 31, No. 3:
234-237.
104
Universitas Sumatera Utara
Seong-Ju Park, Jeong-Rae Ro, Jae-Ki Sim and El-Hang Lee, 1994 “Growth of
GaAs
by
Chemical
Beam
Epitaxy
Using
Unprecracked
Arsine
and
Trimethylgallium” ETRI Journal, Vol. 16, No. 3 : 1-10.
Timothy H. Gfroerer, 2000 “Photoluminescence in Analysis of Surfaces and
Interfaces” John Wiley & Sons Ltd, Chichester : 1-23.
V. I. Zemski, E.L. Ivchenko, D.N. Mirlin and I.I. Reshina, 1975 “Dispersion
of plasmon-phonon modes in semiconductors: Raman scattering and Infrared
spectra” Solid State Communications, Vol. 16 : 221-225.
V. Swaminathan, A. Jayaraman, J.L. Zilko and R.A. Stall, 1985 “A
Comparative Study of (100) GaAs Film Grown by Liquid-Phase Epitaxy,
Molecular-Beam Epitaxy and Metal-Organic Chemical Vapor Deposition by
Raman Spectroscopy” Materials Letters Vol. 3 No. 9,10 : 325-330.
W. I. Wang, 1984 “Molecular beam epitaxial growth and material properties of
GaAs and AlGaAs on Si (100)” Appl. Phys. Lett., Vol.44, No.12 : 149-151.
X. F. Liu, H. Asahi, and K. Lnoue, D. Marx, K. Asami, K. Miki, and S.
Gonda, 1995 “Metalorganic molecular beam epitaxy growth characteristics of
GaAs using triethylgallium and trisdimethylaminoarsenic”
J. Appl. Phys.,
Vol.77, No.5 :1952-1958.
Yasuhito Takahashi, Tetsuo Soga, Shiro Shakai, Masayoshi Umeno, and
Shuzo Hattori, 1984 “Mechanishm of MOCVD Growth ofor GaAs and AlAs”
Japanese Journal of Applied Physics, Vol.23, No. 6 : 709-713.
Yoshihiro Ogawa, Jun Nakagawa, Fujio Minami, 2006 “Intensity and phase
evolutions of transmitted and reflected femto-second optical pulses in GaAs”
Journal of Luminescence 119–120 : 399–403.
105
Universitas Sumatera Utara
Yuan Li, G. Salviati, M.M.G. Bongers, L. Lazzarini, L. Nasi, L.J. Giling,
1996 “On the formation of antiphase domains in the system of GaAs on Ge”
Journal of Crystal Growth 163 : 195-202.
Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd
Tillack, 2011 “Low threading dislocation density Ge deposited on Si (1 0 0) using
RPCVD” Solid-State Electronics 60 : 2-6.
_____________
http://en.wikipedia.org/wiki/List_of_semiconductor_materials
_____________
http://homepages.rpi.edu/~schubert/
_____________
http://www.princetoninstruments.com/
106
Universitas Sumatera Utara
A. Mooradian and G. B. Wright, 1966 “First Order Raman Effect in III-IV
Compound” Solid State Communications Vol. 4 : 431-434.
Anthony C. Jones, and Michael L.M., 2009 “Chemical vapour deposition :
precursors, processes and applications” Royal Society of Chemistry, Cambridge,
UK.
A. Suhandi, H. Sutanto, P. Arifin, M. Budiman, dan M. Barmawi, 2005
“Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD
Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic)”
Jurnal Matematika dan Sains, Vol. 10 No. 1 : 11-15.
B. Galiana, I. Rey-Stolle, C. Algora, K. Volz, and W. Stolz, 2009 “A GaAs
metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from
the Ge substrate” Applied Physics Letters 92, 152102 : 1-3
Budi Mulyanti, Dedi Rusdiana, dan Pepen Arivin, 2007 “Studi penumbuhan
GaN-Mn di atas substrate silicon dengan metode plasma assited metal organic
chemical vapor deposition” Jurnal Sains Material Indonesia, Edisi Khusus : 209214.
D. Olego and M. Cardona, 1981 “Raman scattering by coupled LO-phononplasmon modes and forbidden TO-phonon Raman scattering in heavily doped ptype GaAs” Physical Review B, Vol.24, No.12 : 7217-7232.
Devki N. Talwar, 2010 “Direct evidence of LO phonon-plasmon coupled modes
in n-GaN” Applied Physics Letters 97, 051902 : 1-3
100
Universitas Sumatera Utara
Fred
H.
Pollak
and
H.
Shen,
1993
“Modulation
spectroscopy
of
semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices”
Materials Science and Engineering R10, Nos. 7-,8 : 275-274
George N. Maracas and Dieter K. Schroder, 1989 “Electrical Characterization
of Semiconductor Materials and Devices” William Andrew Publishing.
G. B. Stringfellow, 1998 “Organometallic Vapor-Phase Epitaxy, Second Edition:
Theory and Practice” 2nd edition, Academic Press.
G. Brammertz, M. Caymax, M. Meuris, M. Heyns, Y. Mols, S. Degroote, M.
Leys, 2008 “GaAs on Ge for CMOS” Thin Solid Films 517 : 148–151.
Guy Brammertz, Yves Mols, Stefan Degroote, Maarten Leys, Jan Van
Steenbergen, Gustaaf Borghs, Matty Caymax, 2006 “Selective epitaxial
growth of GaAs on Ge by MOCVD” Journal of Crystal Growth 297 : 204–210.
Guy Brammertz, Matty R. Caymax, Yves Mols, Stefan Degroote, Maarten
Leys, Jan Van Steenbergen, Gillis Winderickx, Gustaaf Borghs and Marc M.
Meuris, 2006 “Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2
Pattern” Electrochemical Society Trans., Vol. 3, Issue 7 : 585-591.
Guy Brammertz, Yves Mols, Stefan Degroote, Vasyl Motsnyi, Maarten Leys,
Gustaaf
Borghs,
and
Matty
Caymax,
2006
“Low
temperature
photoluminescence study of thin epitaxial GaAs films on Ge substrates” Journal
of Applied Physics 99, 093514 : 1-10.
Guy Brammertz, Yves Mols, Stefan Degroote, Maarten Leys, Jan Van
Steenbergen, Gustaaf Borghs, Matty Caymax, 2006 “Selective epitaxial
growth of GaAs on Ge by MOCVD” Journal of Crystal Growth 297 : 204–210.
101
Universitas Sumatera Utara
Guang-Li Luo, Yen-Chang Hsieh, Edward Yi Chang, M. H. Pilkuhn, ChaoHsin Chien, Tsung-Hsi Yang, Chao-Ching Cheng, and Chun-Yen Chang,
2007 “High-speed GaAs metal gate semiconductor field effect transistor structure
grown on a composite Ge/GexSi1−x /Si substrate” J. Appl. Phys. 101, 084501 : 1-6.
Herbert Kroemer, 1987 “Polar on nonpolar epitaxy” Journal of Crystal Growth
81 : 193-204.
H. Kressel and M. Ettenberg, 1973 “Electroluminescence and photoluminescen
ce of GaAs : Ge prepared by liquid phase epitaxy” Appl. Phys. Lett. Vol. 23,
N0.9: 511-513.
H. Mathieu, J. Allegre, and B. Gil, 1991 “Piezomodulation spectroscopy: A
powerful investigation tool of heterostructures” Physical Review B, Vol.43, No.3
: 2218-2227.
H. Shen, Fred H. Pollak, and R. N. Sacks, 1985 “Raman scattering
determination of freecarrier concentration and surface spacecharge layer in 100
nGaAs” Appl. Phys. Lett. 47 (8) : 891-893.
H. W. Yu, E. Y. Chang, Y. Yamamoto, B. Tillack, W. C. Wang, C. I. Kuo, Y.
Y. Wong, and H. Q. Nguyen, 2011 “Effect of graded-temperature arsenic
prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase
epitaxy” Appl. Phys. Lett. 99, 171908 : 1-3.
H. W. Yu, E. Y. Chang, H. Q. Nguyen, J. T. Chang, C. C. Chung, C. I. Kuo,
Y. Y. Wong, and W. C. Wang, 2010 “Effect of substrate misorientation on the
material properties of GaAs/Al0.3Ga0.7As tunnel diodes” Appl. Phys. Lett. 97,
231903 : 1-3.
102
Universitas Sumatera Utara
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G.
Abstreiter, and A. Fontcuberta i Morral, 2009 “Raman spectroscopy of
wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection
rules, and strain effects” Physical Review B 80, 245324: 1-11.
J. Derluyna, K. Dessein, G. Flamand, Y. Mols, J. Poortmans, G. Borghs, and
I. Moerman, 2003 “Comparison of MOVPE grown GaAs solar cells using
different substrates and group-V precursors” Journal of Crystal Growth 247:
237–244.
J. Díaz-Reyes, 2010 “Raman scattering and electrical characterization of
AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD” Sociedad
Mexicana de Ciencia y Tecnología de Superficies y Materiales, Superficies y
Vacío 23 (1) : 13-17.
J. D. Wu, Y. S. Huang, G. Brammertz, and K. K. Tiong, 2009 “Optical
characterization of thin epitaxial GaAs films on Ge substrates” J. Appl. Phys.
106, 023505 : 1-5.
J. H. Parker, JR., D. W. Feldman, and M. Ashkin, 1997 “Raman Scattering by
Silicon and Germanium” , Physical Review, Volume 155, No.3:712-714.
J. Z. Li, J.Bai, J.M.Hydrick, J.S.Park, C.Major, M.Carroll, J.G.Fiorenza, A.
Lochtefeld, 2009 “Growth and characterization of GaAs layers on polished
Ge/Si by selective aspect ratio trapping” Journal of Crystal Growth 311 : 3133 –
3137.
L. Knuuttila, A. Lankinen, J. Likonen, H. Lipsanen, X. Lu, P. Mcnally, J.
Riikonen, and T. Tuomi, 2005 “Low Temperature Growth GaAs on Ge”
Japanese Journal of Applied Physics, Vol. 44, No. 11 : 7777–7784.
103
Universitas Sumatera Utara
Masafumi Yamaguchi, Tatsuya Takamoto, and Kenji Arakia, 2006 “Super
high-efficiency multi-junction and concentrator solar cells” Solar Energy
Materials & Solar Cells 90 : 3068–3077.
O V Misochko and T N Fursova, 2005 “Coupled phonon–plasmon modes in
indium phosphide observed by an ultrafast pump–probe technique” J. Phys.:
Condens. Matter 17, 5577 : 17-26.
Pallab
Bhattacharya,
Weidong
Zhou,
Donghai
Zhu,
and
Jayshri
Sabarinathan, 1999 “Photonic stopbands and light transmission characteristics
in GaAs-based three dimensional waveguides with large index contrast” Applied
Physical Letters, Vol.75, No.12 : 1670-1672.
Peter Y. Yu and Manuel Cardona, 2010 “Fundamentals of Semiconductors:
Physics and Materials Properties” Springer Heidelberg Dordrecht London New
York, Fourth Edition : 376-382.
Raffaello Ferone, John R. Wallbank, Viktor Zólyomi, Edward McCanna,
and Vladimir I. Fal’ko, 2011 “Manifestation of LO–LA phonons in Raman
scattering in grapheme” Solid State Communications 151: 1071–1074.
Richard L. Tober and John D. Bruno, 1990 “Modulation effects near the GaAs
absorption edge” J. Appl. Phys. 68 (12) ; 6388 – 6392.
R. A. Mun˜oz-Herna´ndez, S. Jime´nez-Sandoval, G. Torres-Delgado, C.
Roch, X. K. Chen, and J. C. Irwin, 1966 “Light scattering in p-type GaAs:Ge”
J. Appl. Phys. 80 : 2388-2395.
R. Tyagi, M. Singh, M. Thirumavalavan, T. Srinivasan, and S.K. Agarwal,
2002 “The Influence of As and Ga Prelayers on the Metal-Organic Chemical
Vapor Deposition of GaAs/Ge” Journal of Electronic Materials, Vol. 31, No. 3:
234-237.
104
Universitas Sumatera Utara
Seong-Ju Park, Jeong-Rae Ro, Jae-Ki Sim and El-Hang Lee, 1994 “Growth of
GaAs
by
Chemical
Beam
Epitaxy
Using
Unprecracked
Arsine
and
Trimethylgallium” ETRI Journal, Vol. 16, No. 3 : 1-10.
Timothy H. Gfroerer, 2000 “Photoluminescence in Analysis of Surfaces and
Interfaces” John Wiley & Sons Ltd, Chichester : 1-23.
V. I. Zemski, E.L. Ivchenko, D.N. Mirlin and I.I. Reshina, 1975 “Dispersion
of plasmon-phonon modes in semiconductors: Raman scattering and Infrared
spectra” Solid State Communications, Vol. 16 : 221-225.
V. Swaminathan, A. Jayaraman, J.L. Zilko and R.A. Stall, 1985 “A
Comparative Study of (100) GaAs Film Grown by Liquid-Phase Epitaxy,
Molecular-Beam Epitaxy and Metal-Organic Chemical Vapor Deposition by
Raman Spectroscopy” Materials Letters Vol. 3 No. 9,10 : 325-330.
W. I. Wang, 1984 “Molecular beam epitaxial growth and material properties of
GaAs and AlGaAs on Si (100)” Appl. Phys. Lett., Vol.44, No.12 : 149-151.
X. F. Liu, H. Asahi, and K. Lnoue, D. Marx, K. Asami, K. Miki, and S.
Gonda, 1995 “Metalorganic molecular beam epitaxy growth characteristics of
GaAs using triethylgallium and trisdimethylaminoarsenic”
J. Appl. Phys.,
Vol.77, No.5 :1952-1958.
Yasuhito Takahashi, Tetsuo Soga, Shiro Shakai, Masayoshi Umeno, and
Shuzo Hattori, 1984 “Mechanishm of MOCVD Growth ofor GaAs and AlAs”
Japanese Journal of Applied Physics, Vol.23, No. 6 : 709-713.
Yoshihiro Ogawa, Jun Nakagawa, Fujio Minami, 2006 “Intensity and phase
evolutions of transmitted and reflected femto-second optical pulses in GaAs”
Journal of Luminescence 119–120 : 399–403.
105
Universitas Sumatera Utara
Yuan Li, G. Salviati, M.M.G. Bongers, L. Lazzarini, L. Nasi, L.J. Giling,
1996 “On the formation of antiphase domains in the system of GaAs on Ge”
Journal of Crystal Growth 163 : 195-202.
Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd
Tillack, 2011 “Low threading dislocation density Ge deposited on Si (1 0 0) using
RPCVD” Solid-State Electronics 60 : 2-6.
_____________
http://en.wikipedia.org/wiki/List_of_semiconductor_materials
_____________
http://homepages.rpi.edu/~schubert/
_____________
http://www.princetoninstruments.com/
106
Universitas Sumatera Utara