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Hole mobility in AlxGa1−xSb grown by metalorganic chemical vapor deposition.

J. Appl. Phys. 92, 6051 (2002); doi:10.1063/1.1506192 (6 pages)

Hole mobility in AlxGa1−xSb grown by
metalorganic chemical vapor deposition
A. H. Ramelan and E. M. Goldys
Division of Information and Communication Sciences, Macquarie University, NSW
2109, Australia
Abstract
The temperature dependence of the hole mobilities of AlxGa1−xSb films in the regime
0 x 0.25 has been examined by Van der Pauw–Hall measurements. The films have
been grown by metalorganic chemical vapor deposition on Si–GaAs substrates using
TMAl, TMGa, and TMSb precursors. The mobility decreases sharply when a small
amount of Al in the range 0

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