Perancangan dan Pembuatan Transceiver SSB Untuk Komunikasi Suara dan Data Pada Spektrum High Frequency.
ABSTRAK
Transceiver (transmitter receiver) tidak hanya digunakan untuk
komunikasi suara saja tetapi dapat digunakan untuk komunikasi data dengan
menggunakan sebuah modem. Untuk komunikasi jarak jauh biasa digunakan
transceiver yang bekerja di High Frequency (HF) karena di HF ini gelombang
yang dipancarkan akan dipantulkan oleh lapisan ionosfer.
Tugas Akhir ini membahas prinsip kerja, perancangan, pembuatan
transceiver SSB yang bekerja di HF dan bagaimana cara menghubungkannya
dengan modem Phase Shift Keying (PSK). Transceiver SSB ini menggunakan
frekuensi radio amatir di 3,85 MHz dan daya pancar 10 Watt.
Transceiver SSB ini bisa digunakan untuk komunikasi suara dan data,
dengan memanfaatkan input microphone dan output speaker serta PTT dari
transceiver SSB yang dihubungkan ke modem PSK.
i
ABSTRACT
Transceiver (transmitter receiver) is not only used for audio
communication, but it is also can be used for data communication by using a
modem. For long distance communication, it is usually used transceiver that
works at high frequency (HF), because in the frequency, transmitted wave will be
bounced by ionosphere coat.
This Final Project discusses the principle work, design, realization SSB
transceiver that works at HF and how to connect it to the modem of Phase Shift
Keying (PSK). This SSB transceiver uses amateurish radio frequency at 3,8 MHz
and 10 watt emittance.
This SSB transceiver can be used for audio and data communication, by
using input microphone and output speaker, also PTT from SSB transceiver that
connected to PSK modem.
ii
DAFTAR ISI
ABSTRAK …………………………………..…….…….…………….
i
ABSTRACT ……………………………………………………………
ii
KATA PENGANTAR ……………...…………………………………
iii
DAFTAR ISI…….………………………………...………………….
v
DAFTAR TABEL …………………………………………..………..
vii
DAFTAR GAMBAR.……………………………………..….………
viii
DAFTAR LAMPIRAN……………………………………………….
x
BAB 1 PENDAHULUAN
1.1
Latar Belakang ………..……………………………..………
1
1.2
Perumusan Masalah ...………………………….……….……
1
1.3
Tujuan Penulisan ………………….…………..….……….…
2
1.4
Pembatasan Masalah ..…………………………….……… ..
2
1.5
Sistematika Penulisan ………………………..……………....
2
BAB 2 LANDASAN TEORI
2.1
Gelombang Radio ………..…………………………………
4
2.2
Frekuensi Radio ……..…………………………………….
5
2.3
Modulasi Sinyal ……………………………………………
6
2.3.1
Modulasi Amplitudo …………..……………………....
6
2.3.2
Sistem Modulasi SSB ….……………..……………....
8
2.4
Pemancar (Transmitter) Sistem SSB ……….…….……… ..
9
2.5
Penerima (Receiver) Sistem SSB…….………..………...
10
2.6
Balanced Modulator …………………………………….
10
2.7 Osilator ………………………………………………….
12
2.8
Filter …………………………………………………….
13
2.9 Detektor …………………………………………………
16
BAB 3 PERANCANGAN DAN REALISASI
3.1 Pemancar ………….……………………………………..
17
3.1.1
Penguat Mic (Pre Amp Mic) ………...…….………..
18
3.1.2
Balanced Modulator (BM1) ………….……….….
19
v
3.1.3
Osilator Lokal (OL1) …………………………………
20
3.1.4
Filter Upper Side Band 1 ……………………………
21
3.1.5
Balanced Modulator 2 (BM 2) sebagai Mixer …….
22
3.1.6
Osilator Lokal 2 (OL 2) ……………………………..
22
3.1.7
Filter Upper Side Band 2 ……………………………
23
3.1.8
Penguat Daya RF ……………………………………
24
3.1.8.1 RF Pre Driver …………………………………
24
3.1.8.2 RF Driver ……………………………………..
26
3.1.8.3
Rangkaian Penguat Akhir (RF Final) …………
27
Penerima (Receiver) …………………………………….
29
3.2.1 RF Amplifier …………………………………………
30
3.2.2 RF Mixer …………………………………………….
30
3.2.3
Osilator Lokal 2 (OL 2) ……………………………..
31
3.2.4
Filter USB I …………………………………………
31
3.2.5
Intermediate Frequency ……………….……………
31
3.2
3.2.6 Detektor ……………………………………………
32
3.2.7
Osilator Lokal 1 (OL 1) ……………………………
32
3.2.8 Penguat Audio / Suara ……………………………..
32
3.2.9
Automatic Gain Control (AGC) ……………………
33
Rangkaian PTT …………………………………………
34
3.3
BAB 4 PENGUJIAN DAN ANALISA
4.1
Pengujian Transceiver SSB ……………..…….……...
35
4.1.1
Pengujian Bagian Pemancar ………………………….
37
4.1.2
Pengujian Bagian Penerima ……………………….
44
4.2
Penghubungan Transceiver dengan Modem PSK ………
47
BAB 5 KESIMPULAN DAN SARAN
5.1
Kesimpulan…………………………………….…….
49
5.2
Saran…..………………………………..…………....
49
DAFTAR PUSTAKA
LAMPIRAN
vi
DAFTAR TABEL
Tabel
Judul
Halaman
2.1
Spektrum Frekuensi
5
3.1
Filter Chebychev
28
vii
DAFTAR GAMBAR
Gambar
Judul
Halaman
2.1
Modulasi Amplitudo
7
2.2
Pemancar (Transmitter) Sistem SSB
9
2.3
Penerima (Receiver) Sistem SSB
10
2.4
Balanced Modulator IC
11
2.5
Osilator colpitts
13
2.6
Osilator Kristal.
13
2.7
Low pass filter
14
2.8
High pass filter
14
2.9
Band pass filter
15
2.10
Band stop filter
15
2.11
Detektor
16
3.1
Diagram Blok Transceiver SSB
17
3.2
Rangkaian Pre Amp Mic dan Tone Control
18
3.3
IC LM 1496
19
3.4
Rangkaian Balanced Modulator
20
3.5
Rangkaian Osilator Lokal 1
21
3.6
Filter Upper Side Band
21
3.7
Rangkaian Balanced Modulator 2
22
3.8
Rangkaian Osilator Lokal 2
23
3.9
Rangkaian Filter Upper Side Band 2
24
3.10
Diagram Blok Penguat Daya
24
3.11
Rangkaian RF Pre Driver
26
3.12
Rangkaian RF Driver
27
3.13
Rangkaian LPF Normalisasi
27
3.14
Rangkaian LPF dengan fc=5,56 MHz
29
3.15
Rangkaian Penguat Akhir dan Filter
29
3.16
Rangkaian RF Amp
30
3.17
Rangkaian RF Mixer
30
viii
3.18
Rangkaian Intermediate Frequency
31
3.19
Detektor
32
3.20
Rangkaian Penguat Audio
33
3.21
Rangkaian AGC
33
3.22
Rangkaian PTT
34
4.1
Diagram Blok Pengujian Transceiver
36
4.2
Hasil Pengukuran TP 1 dengan Osiloskop
37
4.3
Sinyal Informasi dengan Frekuensi 2 KHz
37
4.4
Hasil Pengukuran TP 2 dengan Frekuensi Counter
38
4.5
Hasil Pengukuran TP 2 dengan Osiloskop
38
4.6
Sinyal Carrier dengan Frekuensi 455 KHz
38
4.7
Sinyal Hasil Modulasi
39
4.8
Hasil Pengukuran TP 4 dengan Frekuensi Counter
40
4.9
Hasil Pengukuran TP 4 dengan Spectrum Analyzer
40
4.10
Spektrum Sinyal Carrier dengan Frekuensi 3.4 MHz
40
4.11
Hasil Pengukuran TP 5 dengan Spectrum Analyzer
41
4.12
Hasil Pengukuran TP 5 dengan Osiloskop
41
4.13
Spektrum Sinyal USB dengan Frekuensi 3,857 MHz
41
4.14
Hasil Pengukuran TP 6 dengan Power Meter
42
4.15
Sketsa Hasil Pengukuran TP 6
42
4.16
Hasil Pengukuran TP 7 dengan Power Meter
43
4.17
Sketsa Hasil Pengukuran TP 7
43
4.18
Hasil Pengukuran TP 8 dengan SWR Meter
44
4. 19
Sketsa Hasil Pengukuran TP 8
44
4.20
Signal Generator dengan Frekuensi 3,857 MHz
45
4.21
Spektrum Sinyal USB
45
4.22
Spektrum dari TP 11
46
4.23
Spektrum dari TP 12
46
4.24
Sinyal Informasi dari Output Detektor
47
4.25
Sinyal Informasi 2 KHz
47
4.26
Penghubungan Transceiver dengan Modem PSK
48
ix
DAFTAR LAMPIRAN
Lampiran
Judul
Halaman
A
Data Sheet Transistor 2SK 192
A-1
B
Data Sheet Transistor 2SC 828
B-1
C
Data Sheet Transistor 2SC 829
C-1
D
Data Sheet Transistor 2SC 1383
D-1
E
Data Sheet Transistor 2SC 1162
E-1
F
Data Sheet Transistor 2SC 1969
F-1
G
Data Sheet IC LM 741
G-1
H
Data Sheet IC LM 386
H-1
I
Data Sheet IC LM 1496
I-1
J
Layout PCB
J-1
x
LM386
Low Voltage Audio Power Amplifier
General Description
Features
The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to
keep external part count low, but the addition of an external
resistor and capacitor between pins 1 and 8 will increase the
gain to any value up to 200.
n
n
n
n
n
n
n
n
n
The inputs are ground referenced while the output is automatically biased to one half the supply voltage. The quiescent power drain is only 24 milliwatts when operating from a
6 volt supply, making the LM386 ideal for battery operation.
Battery operation
Minimum external parts
Wide supply voltage range: 4V–12V or 5V–18V
Low quiescent current drain: 4 mA
Voltage gains from 20 to 200
Ground referenced input
Self-centering output quiescent voltage
Low distortion
Available in 8 pin MSOP package
Applications
n
n
n
n
n
n
n
n
AM-FM radio amplifiers
Portable tape player amplifiers
Intercoms
TV sound systems
Line drivers
Ultrasonic drivers
Small servo drivers
Power converters
Equivalent Schematic and Connection Diagrams
Small Outline,
Molded Mini Small Outline,
and Dual-In-Line Packages
DS006976-2
DS006976-1
© 2000 National Semiconductor Corporation
DS006976
Top View
Order Number LM386M-1,
LM386MM-1, LM386N-1,
LM386N-3 or LM386N-4
See NS Package Number
M08A, MUA08A or N08E
www.national.com
LM386 Low Voltage Audio Power Amplifier
January 2000
LM386
Absolute Maximum Ratings (Note 2)
Dual-In-Line Package
Soldering (10 sec)
+260˚C
Small Outline Package
(SOIC and MSOP)
Vapor Phase (60 sec)
+215˚C
Infrared (15 sec)
+220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Thermal Resistance
37˚C/W
θJC (DIP)
107˚C/W
θJA (DIP)
35˚C/W
θJC (SO Package)
172˚C/W
θJA (SO Package)
210˚C/W
θJA (MSOP)
56˚C/W
θJC (MSOP)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
(LM386N-1, -3, LM386M-1)
Supply Voltage (LM386N-4)
Package Dissipation (Note 3)
(LM386N)
(LM386M)
(LM386MM-1)
Input Voltage
Storage Temperature
Operating Temperature
Junction Temperature
Soldering Information
15V
22V
1.25W
0.73W
0.595W
± 0.4V
−65˚C to +150˚C
0˚C to +70˚C
+150˚C
Electrical Characteristics (Notes 1, 2)
TA = 25˚C
Parameter
Conditions
Min
Typ
Max
Units
12
V
Operating Supply Voltage (VS)
LM386N-1, -3, LM386M-1, LM386MM-1
4
LM386N-4
Quiescent Current (IQ)
5
VS = 6V, VIN = 0
4
18
V
8
mA
Output Power (POUT)
LM386N-4
VS = 6V, RL = 8Ω, THD = 10%
VS = 9V, RL = 8Ω, THD = 10%
VS = 16V, RL = 32Ω, THD = 10%
Voltage Gain (AV)
VS = 6V, f = 1 kHz
LM386N-1, LM386M-1, LM386MM-1
LM386N-3
Bandwidth (BW)
Total Harmonic Distortion (THD)
Power Supply Rejection Ratio (PSRR)
10 µF from Pin 1 to 8
VS = 6V, Pins 1 and 8 Open
VS = 6V, RL = 8Ω, POUT = 125 mW
f = 1 kHz, Pins 1 and 8 Open
VS = 6V, f = 1 kHz, CBYPASS = 10 µF
250
325
500
700
mW
mW
700
1000
mW
26
dB
46
dB
300
kHz
0.2
%
50
dB
50
kΩ
250
nA
Pins 1 and 8 Open, Referred to Output
Input Resistance (RIN)
Input Bias Current (IBIAS)
VS = 6V, Pins 2 and 3 Open
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 3: For operation in ambient temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and 1) a thermal resistance of 107˚C/W junction to ambient for the dual-in-line package and 2) a thermal resistance of 170˚C/W for the small outline package.
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2
LM386
Application Hints
INPUT BIASING
GAIN CONTROL
To make the LM386 a more versatile amplifier, two pins (1
and 8) are provided for gain control. With pins 1 and 8 open
the 1.35 kΩ resistor sets the gain at 20 (26 dB). If a capacitor
is put from pin 1 to 8, bypassing the 1.35 kΩ resistor, the
gain will go up to 200 (46 dB). If a resistor is placed in series
with the capacitor, the gain can be set to any value from 20
to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1 to ground.
The schematic shows that both inputs are biased to ground
with a 50 kΩ resistor. The base current of the input transistors is about 250 nA, so the inputs are at about 12.5 mV
when left open. If the dc source resistance driving the LM386
is higher than 250 kΩ it will contribute very little additional
offset (about 2.5 mV at the input, 50 mV at the output). If the
dc source resistance is less than 10 kΩ, then shorting the
unused input to ground will keep the offset low (about 2.5 mV
at the input, 50 mV at the output). For dc source resistances
between these values we can eliminate excess offset by putting a resistor from the unused input to ground, equal in
value to the dc source resistance. Of course all offset problems are eliminated if the input is capacitively coupled.
When using the LM386 with higher gains (bypassing the
1.35 kΩ resistor between pins 1 and 8) it is necessary to bypass the unused input, preventing degradation of gain and
possible instabilities. This is done with a 0.1 µF capacitor or
a short to ground depending on the dc source resistance on
the driven input.
Additional external components can be placed in parallel
with the internal feedback resistors to tailor the gain and frequency response for individual applications. For example,
we can compensate poor speaker bass response by frequency shaping the feedback path. This is done with a series
RC from pin 1 to 5 (paralleling the internal 15 kΩ resistor).
For 6 dB effective bass boost: R ≅ 15 kΩ, the lowest value
for good stable operation is R = 10 kΩ if pin 8 is open. If pins
1 and 8 are bypassed then R as low as 2 kΩ can be used.
This restriction is because the amplifier is only compensated
for closed-loop gains greater than 9.
3
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LM386
Typical Performance Characteristics
Quiescent Supply Current
vs Supply Voltage
Power Supply Rejection Ratio
(Referred to the Output)
vs Frequency
Peak-to-Peak Output Voltage
Swing vs Supply Voltage
DS006976-5
DS006976-13
DS006976-12
Voltage Gain vs Frequency
Distortion vs Frequency
DS006976-15
DS006976-14
Device Dissipation vs Output
Power — 4Ω Load
Device Dissipation vs Output
Power — 8Ω Load
DS006976-17
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Distortion vs Output Power
DS006976-18
4
DS006976-16
Device Dissipation vs Output
Power — 16Ω Load
DS006976-19
LM386
Typical Applications
Amplifier with Gain = 20
Minimum Parts
Amplifier with Gain = 200
DS006976-4
DS006976-3
Amplifier with Gain = 50
Low Distortion Power Wienbridge Oscillator
DS006976-6
DS006976-7
Square Wave Oscillator
Amplifier with Bass Boost
DS006976-8
DS006976-9
5
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LM386
Typical Applications
(Continued)
Frequency Response with Bass Boost
DS006976-10
AM Radio Power Amplifier
DS006976-11
Note 4: Twist Supply lead and supply ground very tightly.
Note 5: Twist speaker lead and ground very tightly.
Note 6: Ferrite bead in Ferroxcube K5-001-001/3B with 3 turns of wire.
Note 7: R1C1 band limits input signals.
Note 8: All components must be spaced very closely to IC.
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6
LM386
Physical Dimensions
inches (millimeters) unless otherwise noted
SO Package (M)
Order Number LM386M-1
NS Package Number M08A
7
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LM386
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
8-Lead (0.118” Wide) Molded Mini Small Outline Package
Order Number LM386MM-1
NS Package Number MUA08A
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8
LM386 Low Voltage Audio Power Amplifier
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (N)
Order Number LM386N-1, LM386N-3 or LM386N-4
NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
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Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com
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English Tel: +49 (0) 1 80-532 78 32
Français Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: sea.support@nsc.com
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Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
LM741
Operational Amplifier
General Description
The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plug-in replacements
for the 709C, LM201, MC1439 and 748 in most applications.
The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and
output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations.
The LM741C/LM741E are identical to the LM741/LM741A
except that the LM741C/LM741E have their performance
guaranteed over a 0˚C to +70˚C temperature range, instead
of −55˚C to +125˚C.
Schematic Diagram
DS009341-1
Offset Nulling Circuit
DS009341-7
© 1999 National Semiconductor Corporation
DS009341
www.national.com
LM741 Operational Amplifier
May 1998
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 6)
LM741A
LM741E
LM741
LM741C
± 22V
± 22V
± 22V
± 18V
Supply Voltage
Power Dissipation (Note 2)
500 mW
500 mW
500 mW
500 mW
± 30V
± 30V
± 30V
± 30V
Differential Input Voltage
± 15V
± 15V
± 15V
± 15V
Input Voltage (Note 3)
Output Short Circuit Duration
Continuous
Continuous
Continuous
Continuous
Operating Temperature Range
−55˚C to +125˚C
0˚C to +70˚C
−55˚C to +125˚C
0˚C to +70˚C
Storage Temperature Range
−65˚C to +150˚C
−65˚C to +150˚C
−65˚C to +150˚C
−65˚C to +150˚C
Junction Temperature
150˚C
100˚C
150˚C
100˚C
Soldering Information
N-Package (10 seconds)
260˚C
260˚C
260˚C
260˚C
J- or H-Package (10 seconds)
300˚C
300˚C
300˚C
300˚C
M-Package
Vapor Phase (60 seconds)
215˚C
215˚C
215˚C
215˚C
Infrared (15 seconds)
215˚C
215˚C
215˚C
215˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 7)
400V
400V
400V
400V
Electrical Characteristics (Note 4)
Parameter
Conditions
LM741A/LM741E
Min
Input Offset Voltage
Typ
Max
0.8
3.0
LM741
Min
LM741C
Typ
Max
1.0
5.0
Min
Units
Typ
Max
2.0
6.0
TA = 25˚C
RS ≤ 10 kΩ
RS ≤ 50Ω
mV
mV
TAMIN ≤ TA ≤ TAMAX
RS ≤ 50Ω
4.0
mV
RS ≤ 10 kΩ
6.0
Average Input Offset
7.5
15
mV
µV/˚C
Voltage Drift
Input Offset Voltage
TA = 25˚C, VS = ± 20V
± 10
± 15
± 15
mV
Adjustment Range
Input Offset Current
TA = 25˚C
3.0
TAMIN ≤ TA ≤ TAMAX
Average Input Offset
30
20
200
70
85
500
20
200
nA
300
nA
0.5
nA/˚C
Current Drift
Input Bias Current
TA = 25˚C
Input Resistance
TAMIN ≤ TA ≤ TAMAX
TA = 25˚C, VS = ± 20V
TAMIN ≤ TA ≤ TAMAX,
VS = ± 20V
Input Voltage Range
30
1.0
80
6.0
500
80
1.5
0.3
2.0
0.3
2.0
0.5
500
nA
0.8
µA
MΩ
MΩ
± 12
TA = 25˚C
TAMIN ≤ TA ≤ TAMAX
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80
0.210
± 12
2
± 13
± 13
V
V
Electrical Characteristics (Note 4)
Parameter
(Continued)
Conditions
LM741A/LM741E
Min
Large Signal Voltage Gain
TA = 25˚C, RL ≥ 2 kΩ
VS = ± 20V, VO = ± 15V
VS = ± 15V, VO = ± 10V
Typ
Max
LM741
Min
Typ
50
200
LM741C
Max
Min
Typ
20
200
Units
Max
50
V/mV
V/mV
TAMIN ≤ TA ≤ TAMAX,
RL ≥ 2 kΩ,
VS = ± 20V, VO = ± 15V
VS = ± 15V, VO = ± 10V
VS = ± 5V, VO = ± 2V
Output Voltage Swing
32
V/mV
25
RL ≥ 10 kΩ
10
V/mV
± 16
± 15
V
V
RL ≥ 10 kΩ
± 12
± 10
RL ≥ 2 kΩ
TA = 25˚C
10
Current
TAMIN ≤ TA ≤ TAMAX
10
Common-Mode
TAMIN ≤ TA ≤ TAMAX
RS ≤ 10 kΩ, VCM = ± 12V
Rejection Ratio
RS ≤ 50Ω, VCM = ± 12V
Supply Voltage Rejection
Ratio
25
35
± 14
± 13
± 12
± 10
25
± 14
± 13
V
25
mA
40
mA
70
80
95
86
96
90
70
90
dB
RS ≤ 10 kΩ
TA = 25˚C, Unity Gain
77
96
77
96
dB
µs
0.25
0.8
0.3
0.3
Overshoot
6.0
20
5
5
Slew Rate
Supply Current
Power Consumption
LM741A
dB
dB
Rise Time
Bandwidth (Note 5)
V
TAMIN ≤ TA ≤ TAMAX,
VS = ± 20V to VS = ± 5V
RS ≤ 50Ω
Transient Response
V/mV
VS = ± 20V
RL ≥ 2 kΩ
VS = ± 15V
Output Short Circuit
15
TA = 25˚C
TA = 25˚C, Unity Gain
TA = 25˚C
0.437
1.5
0.3
0.7
TA = 25˚C
VS = ± 20V
VS = ± 15V
80
VS = ± 20V
TA = TAMIN
%
MHz
0.5
0.5
V/µs
1.7
2.8
1.7
2.8
50
85
50
85
150
mA
mW
mW
165
mW
135
mW
LM741E
TA = TAMAX
VS = ± 20V
TA = TAMIN
150
mW
150
mW
LM741
TA = TAMAX
VS = ± 15V
TA = TAMIN
TA = TAMAX
60
100
mW
45
75
mW
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
3
www.national.com
Electrical Characteristics (Note 4)
(Continued)
Note 2: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under “Absolute Maximum Ratings”). Tj = TA + (θjA PD).
Thermal Resistance
θjA (Junction to Ambient)
θjC (Junction to Case)
Cerdip (J)
DIP (N)
HO8 (H)
SO-8 (M)
100˚C/W
100˚C/W
170˚C/W
195˚C/W
N/A
N/A
25˚C/W
N/A
Note 3: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage.
Note 4: Unless otherwise specified, these specifications apply for VS = ± 15V, −55˚C ≤ TA ≤ +125˚C (LM741/LM741A). For the LM741C/LM741E, these specifications are limited to 0˚C ≤ TA ≤ +70˚C.
Note 5: Calculated value from: BW (MHz) = 0.35/Rise Time(µs).
Note 6: For military specifications see RETS741X for LM741 and RETS741AX for LM741A.
Note 7: Human body model, 1.5 kΩ in series with 100 pF.
Connection Diagram
Metal Can Package
Ceramic Dual-In-Line Package
DS009341-2
Note 8: LM741H is available per JM38510/10101
DS009341-5
Order Number LM741H, LM741H/883 (Note 8),
LM741AH/883 or LM741CH
See NS Package Number H08C
Note 9: also available per JM38510/10101
Note 10: also available per JM38510/10102
Order Number LM741J-14/883 (Note 9),
LM741AJ-14/883 (Note 10)
See NS Package Number J14A
Dual-In-Line or S.O. Package
Ceramic Flatpak
DS009341-6
DS009341-3
Order Number LM741W/883
See NS Package Number W10A
Order Number LM741J, LM741J/883,
LM741CM, LM741CN or LM741EN
See NS Package Number J08A, M08A or N08E
www.national.com
4
Physical Dimensions
inches (millimeters) unless otherwise noted
Metal Can Package (H)
Order Number LM741H, LM741H/883, LM741AH/883, LM741CH or LM741EH
NS Package Number H08C
Ceramic Dual-In-Line Package (J)
Order Number LM741CJ or LM741J/883
NS Package Number J08A
5
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Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Ceramic Dual-In-Line Package (J)
Order Number LM741J-14/883 or LM741AJ-14/883
NS Package Number J14A
Small Outline Package (M)
Order Number LM741CM
NS Package Number M08A
www.national.com
6
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (N)
Order Number LM741CN or LM741EN
NS Package Number N08E
7
www.national.com
LM741 Operational Amplifier
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
10-Lead Ceramic Flatpak (W)
Order Number LM741W/883
NS Package Number W10A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.national.com
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Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 1 80-530 85 85
English Tel: +49 (0) 1 80-532 78 32
Français Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: sea.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
LM1596/LM1496 Balanced Modulator-Demodulator
General Description
Features
The LM1596/LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to
the product of an input (signal) voltage and a switching (carrier) signal. Typical applications include suppressed carrier
modulation, amplitude modulation, synchronous detection,
FM or PM detection, broadband frequency doubling and
chopping.
The LM1596 is specified for operation over the b55§ C to
a 125§ C military temperature range. The LM1496 is specified for operation over the 0§ C to a 70§ C temperature range.
Y
Y
Y
Y
Y
Excellent carrier suppression
65 dB typical at 0.5 MHz
50 dB typical at 10 MHz
Adjustable gain and signal handling
Fully balanced inputs and outputs
Low offset and drift
Wide frequency response up to 100 MHz
Schematic and Connection Diagrams
Metal Can Package
TL/H/7887 – 2
Top View
Note: Pin 10 is connected electrically to the
case through the device substrate.
Order Number LM1496H or LM1596H
See NS Package Number H08C
TL/H/7887 – 1
Dual-In-Line and Small Outline Packages
Numbers in parentheses show DIP connections.
TL/H/7887 – 3
Order Number LM1496M or LM1496N
See NS Package Number M14A or N14A
C1995 National Semiconductor Corporation
TL/H/7887
RRD-B30M115/Printed in U. S. A.
LM1596/LM1496 Balanced Modulator-Demodulator
February 1995
Absolute Maximum Ratings
Soldering Information
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Internal Power Dissipation (Note 1)
Applied Voltage (Note 2)
Differential Input Signal (V7 b V8)
# Dual-In-Line Package
Soldering (10 seconds)
500 mW
30V
260§ C
# Small Outline Package
Vapor Phase (60 seconds)
215§ C
Infrared (15 seconds)
220§ C
See AN-450 ‘‘Surface Mounting Methods and their effects
on Product Reliability’’ for other methods of soldering surface mount devices.
g 5.0V
g (5 a I5R0)V
Differential Input Signal (V4 b V1)
5.0V
Input Signal (V2 b V1, V3 b V4)
Bias Current (I5)
12 mA
Operating Temperature Range LM1596 b55§ C to a 125§ C
LM1496
0§ C to a 70§ C
b 65§ C to a 150§ C
Storage Temperature Range
Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuit)
Parameter
LM1596
Conditions
LM1496
Units
Min Typ Max Min Typ Max
Carrier Feedthrough
Carrier Suppression
Transadmittance Bandwidth
VC e 60 mVrms sine wave
fC e 1.0 kHz, offset adjusted
VC e 60 mVrms sine wave
fC e 10 kHz, offset adjusted
VC e 300 mVpp square wave
fC e 1.0 kHz, offset adjusted
VC e 300 mVpp square wave
fC e 1.0 kHz, not offset adjusted
fS e 10 kHz, 300 mVrms
fC e 500 kHz, 60 mVrms sine wave offset adjusted
fS e 10 kHz, 300 mVrms
fC e 10 MHz, 60 mVrms sine wave offset adjusted
50
RL e 50X
Carrier Input Port, VC e 60 mVrms sine wave
fS e 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS e 300 mVrms sine wave
V7 b V8 e 0.5Vdc
40
40
mVrms
140
140
mVrms
0.04
0.2
0.04
0.2
mVrms
20
100
20
150
mVrms
65
50
65
dB
50
50
dB
300
300
MHz
80
80
MHz
3.5
V/V
Voltage Gain, Signal Channel
VS e 100 mVrms, f e 1.0 kHz
V7 b V8 e 0.5 Vdc
Input Resistance, Signal Port
f e 5.0 MHz
V7 b V8 e 0.5 Vdc
200
200
kX
Input Capacitance, Signal Port
f e 5.0 MHz
V7 b V8 e 0.5 Vdc
2.0
2.0
pF
40
40
kX
5.0
5.0
pF
2.5
Single Ended Output Resistance f e 10 MHz
3.5
2.5
Single Ended Output
Capacitance
f e 10 MHz
Input Bias Current
(I1 a I4)/2
12
25
12
30
Input Bias Current
(I7 a I8)/2
12
25
12
30
mA
Input Offset Current
(I1 b I4)
0.7
5.0
0.7
5.0
mA
Input Offset Current
(I7 b I8)
0.7
5.0
5.0
5.0
Average Temperature
Coefficient of Input
Offset Current
(b55§ C k TA k a 125§ C)
(0§ C k TA k a 70§ C)
2.0
Output Offset Current
(I6 b I9)
14
Average Temperature
Coefficient of Output
Offset Current
(b55§ C k TA k a 125§ C)
(0§ C k TA k a 70§ C)
90
14
90
2
mA
nA/§ C
nA/§ C
2.0
50
mA
60
mA
nA/§ C
nA/§ C
Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuit) (Continued)
Parameter
LM1596
Conditions
Min
Signal Port Common Mode
Input Voltage Range
fS e 1.0 kHz
Signal Port Common Mode
Rejection Ratio
V7 b V8 e 0.5 Vdc
Typ
LM1496
Max
Min
Typ
Units
Max
5.0
5.0
Vp-p
b 85
b 85
dB
Common Mode Quiescent
Output Voltage
8.0
8.0
Vdc
Differential Output Swing
Capability
8.0
8.0
Vp-p
Positive Supply Current
(I6 a Ig)
2.0
3.0
2.0
3.0
mA
Negative Supply Current
(I10)
3.0
4.0
3.0
4.0
mA
Power Dissipation
33
33
mW
Note 1: LM1596 rating applies to case temperatures to a 125§ C; derate linearly at 6.5 mW/§ C for ambient temperature above 75§ C. LM1496 rating applies to case
temperatures to a 70§ C.
Note 2: Voltage applied between pins 6-7, 8-1, 9-7, 9-8, 7-4, 7-1, 8-4, 6-8, 2-5, 3-5.
Note 3: Refer to rets1596x drawing for specifications of military LM1596H versions.
Typical Performance Characteristics
Carrier Suppression vs
Carrier Input Level
Carrier Suppression vs
Frequency
Carrier Feedthrough vs
Frequency
Sideband Output vs
Carrier Levels
Sideband and Signal Port
Transadmittances vs
Frequency
Signal-Port Frequency
Response
TL/H/7887 – 5
3
Typical Application and Test Circuit
Suppressed Carrier Modulator
Numbers in parentheses show DIP connections.
TL/H/7887 – 4
Note: S1 is closed for ‘‘adjusted’’ measurements.
SSB Product Detector
Numbers in parentheses show DIP connections.
TL/H/7887 – 6
This figure shows the LM1596 used as a single sideband (SSB) suppressed carrier demodulator (product detector). The carrier signal is applied to the carrier input
port with sufficient amplitude for switching operation. A carrier input level of 300 mVrms is optimum. The composite SSB signal is applied to the signal input port
with an amplitude of 5.0 to 500 mVrms. All output signal components except the desired demodulated audio are filtered out, so that an offset adjustment is not
required. This circuit may also be used as an AM detector by applying composite and carrier signals in the same manner as described for product detector
operation.
4
Typical Applications (Continued)
Broadband Frequency Doubler
Numbers in parentheses show DIP connections.
TL/H/7887 – 7
The frequency doubler circuit shown will double low-level signals with low distortion. The value of C should be chosen for low reactance at the operating frequency.
Signal level at the carrier input must be less than 25 mV peak to maintain operation in the linear region of the switching differential amplifier. Levels to 50 mV peak
may be used with some distortion of the output waveform. If a larger input signal is available a resistive divider may be used at the carrier input, with full signal
applied to the signal input.
5
6
Physical Dimensions inches (millimeters)
Metal Can Package (H)
Order Number LM1496H or LM1596H
NS Package Number H08C
Molded Small Outline Package (M)
Order Number LM1496M
NS Package Number M14A
7
LM1596/LM1496 Balanced Modulator-Demodulator
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number LM1496N
NS Package Number N14A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Europe
Fax: (a49) 0-180-530 85 86
Email: cnjwge @ tevm2.nsc.com
Deutsch Tel: (a49) 0-180-530 85 85
English Tel: (a49) 0-180-532 78 32
Fran3ais Tel: (a49) 0-180-532 93 58
Italiano Tel: (a49) 0-180-534 16 80
National Semiconductor
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Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductor
Japan Ltd.
Tel: 81-043-299-2309
Fax: 81-043-299-2408
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
■ Features
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
+0.2
0.45 –0.1
0.45 –0.1
1.27
1.27
2.3±0.2
■ Absolute Maximum Ratings
13.5±0.5
●
4.0±0.2
5.1±0.2
5.0±0.2
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Symbol
Parameter
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
Forward current transfer ratio
hFE*
VCE = 10V, IC = 1mA
70
150
Transition frequency
fT
VCB = 10V, IC = 1mA, f = 200MHz
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
Reverse transfer impedance
Zrb
VCB = 10V, IE = –1mA, f = 2MHz
*h
FE
V
250
MHz
230
1.3
1.6
pF
60
Ω
Rank classification
Rank
B
C
hFE
70 ~ 160
110 ~ 250
1
Transistor
2SC829
PC — Ta
IC — VCE
60
IB=100µA
350
300
250
200
150
100
80µA
8
60µA
6
40µA
4
20µA
2
40
25˚C
30
Ta=75˚C
–25˚C
20
10
50
0
60
80 100 120 140 160
0
0
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
100
80
60
40
20
0
1.2
1.8
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
3
fT — IE
10
30
Reverse transfer impedance Zrb (Ω)
400
VCB=10V
6V
200
100
–1
–3
–10
–30
Emitter current IE (mA)
–100
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.1
0.3
60
50
40
VCB=6V
10V
20
10
– 0.3
–1
1
3
10
30
100
Cre — VCE
70
0
– 0.1
2.0
Collector current IC (mA)
f=2MHz
Ta=25˚C
30
1.6
250
Zrb — IE
500
1.2
VCE=10V
100
80
Ta=25˚C
0.8
300
IB/IB=10
Collector current IC (mA)
600
0
– 0.1 – 0.3
0.4
Base to emitter voltage VBE (V)
hFE — IC
100
Base to emitter voltage VBE (V)
300
0
VCE(sat) — IC
120
0.6
18
Collector to emitter voltage VCE (V)
IB — VBE
0
12
Forward current transfer ratio hFE
40
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
20
Ambient temperature Ta (˚C)
Base current IB (µA)
50
Collector current IC (mA)
10
400
0
Transition frequency fT (MHz)
VCE=10V
Ta=25˚C
450
0
2
IC — VBE
12
Collector current IC (mA)
Collector power dissipation PC (mW)
500
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
2SC829
Transistor
Cob — VCB
bie — gie
1.0
0.8
0.6
0.4
Reverse transfer susceptance bre (mS)
1.2
0
yie=gie+jbie
VCE=10V
Input susceptance bie (mS)
Collector output capacitance Cob (pF)
IE=–1mA
f=1MHz
Ta=25˚C
1.4
100
10
6
25
4
10.7
IE=– 0.4mA
–1mA
–2mA
–4mA
–7mA
2
f=0.45MHz
0
1
3
10
30
0
100
Collector to base voltage VCB (V)
4
100
58
–1mA
–4mA
25
58
100
–40
100
58
f=10.7MHz
25
–60
58
IE=–7mA
–80
–100
1.0
0.8
58
25
40
60
–4mA
–2.0
–2.5
–3.0
– 0.5
100
IE=–7mA
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
80
Forward transfer conductance
100
gfe (mS)
–7mA
–4mA
–2mA
–1mA
IE=– 0.1mA
0.4
10.7
0.2
yoe=goe+jboe
VCE=10V
f=0.45MHz
0
20
–2mA
– 0.4mA
0.6
yfe=gfe+jbfe
VCE=10V
–120
0
–1.5
100
10.7
–2mA
100
20
– 0.4mA
–1mA
1.2
0.45
Output susceptance boe (mS)
– 0.1mA
–20
25
16
58
–1.0
boe — goe
0.45
10.7
–0.4mA
12
Input conductance gie (mS)
bfe — gfe
0
8
f=0.45MHz
10.7
25
yre=gre+jbre
VCE=10V
– 0.5
58
8
0.2
0
Forward transfer susceptance bfe (mS)
bre — gre
12
1.6
0
0.2
0.4
0.6
0.8
1.0
Output conductance goe (mS)
3
2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
35
V
Collector to emitter voltage
VCEO
35
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
2.5
A
Collector peak current
I C(peak)
3
A
Collector power dissipation
PC
0.75
W
10
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
35
—
—
V
I C = 1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
35
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
20
µA
VCB = 35 V, IE = 0
60
—
320
VCE = 2 V, IC = 0.5 A
hFE
20
—
—
VCE = 2 V, IC = 1.5 A
(pulse test)
Base to emitter voltage
VBE
—
0.93
1.5
V
VCE = 2 V, IC = 1.5 A
(pulse test)
Collector to emitter saturation
voltage
VCE(sat)
—
0.5
1.0
V
I C = 2 A, IB = 0.2 A (pulse test)
Gain bandwidth product
fT
—
180
—
MHz
VCE = 2 V, IC = 0.2 A
DC current transfer ratio
Note:
hFE*
1
1. The 2SC1162 is grouped by h FE as follows.
B
C
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation Curve
Area of Safe Operation
5
0.75
TC = 25°C
0.6
1.0
W
0.2
10
0.4
2
=
Collector current IC (A)
IC(max)(DC Operation)
PC
Collector power dissipation PC (W)
0.8
0.5
0.2
0.1
0
2
50
100
150
Ambient temperature Ta (°C)
200
1
5
20
50
2
10
Collector to emitter voltage VCE (V)
2SC1162
Typical Output Characteristics
Maximum Collector Dissipation Curve
16
TC = 25°C
Collector current IC (A)
Collector power dissipation PC (W)
2.0
12
8
4
17
1.6
15
1.2
12
10
0.8
8
6
4
0.4
50
100
150
200
Case temperature TC (°C)
0
1
3
4
2
5
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
2.0
280
Collector Current IC (A)
1.0
0.5
25
TC = 75°C
–25
0.1
0.05
0.02
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to emitter voltage VBE (V)
DC current transfer ratio hFE
VCE = 2 V
0
20
2 mA
IB = 0
0
0.2
24
240
VCE = 2 V
200
160
TC = 75°C
120
80
25
–25
40
0
0.01
0.3
0.03
0.1
1.0
Collector current IC (A)
3.0
3
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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(America) Inc.
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Tel: (2) 735 9218
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Unit: mm
Complementary to 2SA683 and 2SA684
4.9±0.2
5.9±0.2
Low collector to emitter saturation voltage VCE(sat).
Complementary pair with 2SA683 and 2SA684.
Collector to
2SC1383
base voltage
2SC1384
Collector to
Ratings
2SC1383
30
VCBO
25
V
50
+0.2
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
voltage
2SC1384
Collector to emitter
2SC1383
voltage
2SC1384
Emitter to base voltage
Conditions
VCBO
IC = 10µA, IE = 0
VCEO
IC = 2mA, IB = 0
VEBO
IE = 10µA, IC = 0
hFE1
Forward current transfer ratio
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
min
typ
VCB = 20V, IE = 0
ICBO
2SC1383
1.27
(Ta=25˚C)
Symbol
Collector to base
0.45–0.1
1.27
1
Parameter
Collector cutoff current
+0.2
0.45–0.1
Emitter to base voltage
■ Electrical Characteristics
2.54±0.15
Unit
V
60
VCEO
emitter voltage 2SC1384
+0.3
(Ta=25˚C)
Symbol
Parameter
0.7–0.2
0.7±0.1
■ Absolute Maximum Ratings
13.5±0.5
●
3.2
●
8.6±0.2
■ Features
*1
VCE = 10V, IC =
500mA*2
max
Unit
0.1
µA
30
V
60
25
V
50
V
5
85
160
50
100
340
hFE2
VCE = 5V, IB = 1A*2
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 50mA*2
0.2
0.4
V
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB = 50mA*2
0.85
1.2
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
MHz
20
*2
*1h
FE1
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
1
2SC1383, 2SC1384
Transistor
PC — Ta
IC — VCE
1.2
IC — I B
1.5
1.2
1.25
0.8
0.6
0.4
0.2
8mA
1.0
7mA
6mA
0.75
5mA
4mA
3mA
0.5
2mA
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
3
3
25˚C
75˚C
0.3
0.1
0.03
0.3
140
120
100
80
60
40
20
1
3
Emitter current IE (mA)
–100
8
10
12
500
400
300
Ta=75˚C
200
25˚C
–25˚C
100
0
0.01 0.03
10
0.1
0.3
1
3
10
Collector current IC (A)
VCER — RBE
120
IE=0
f=1MHz
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–30
6
VCE=10V
Cob — VCB
Collector output capacitance Cob (pF)
Transition frequency fT (MHz)
Ta=–25˚C
1
0.1
4
600
50
–10
2
Base current IB (mA)
Collector current IC (A)
VCB=10V
Ta=25˚C
–3
0
hFE — IC
10
0.01
0.01 0.03
10
160
0
–1
10
30
fT — IE
180
8
IC/IB=10
Collector current IC (A)
200
6
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
3
0.1
4
VBE(sat) — IC
IC/IB=10
0.3
0.4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
0.6
0
0
Forward current transfer ratio hFE
40
1
3
10
30
100
Collector to base voltage VCB (V)
Collector to emitter voltage VCER (V)
20
0.8
0.2
1mA
0
0
2
1.0
IB=10mA
Transceiver (transmitter receiver) tidak hanya digunakan untuk
komunikasi suara saja tetapi dapat digunakan untuk komunikasi data dengan
menggunakan sebuah modem. Untuk komunikasi jarak jauh biasa digunakan
transceiver yang bekerja di High Frequency (HF) karena di HF ini gelombang
yang dipancarkan akan dipantulkan oleh lapisan ionosfer.
Tugas Akhir ini membahas prinsip kerja, perancangan, pembuatan
transceiver SSB yang bekerja di HF dan bagaimana cara menghubungkannya
dengan modem Phase Shift Keying (PSK). Transceiver SSB ini menggunakan
frekuensi radio amatir di 3,85 MHz dan daya pancar 10 Watt.
Transceiver SSB ini bisa digunakan untuk komunikasi suara dan data,
dengan memanfaatkan input microphone dan output speaker serta PTT dari
transceiver SSB yang dihubungkan ke modem PSK.
i
ABSTRACT
Transceiver (transmitter receiver) is not only used for audio
communication, but it is also can be used for data communication by using a
modem. For long distance communication, it is usually used transceiver that
works at high frequency (HF), because in the frequency, transmitted wave will be
bounced by ionosphere coat.
This Final Project discusses the principle work, design, realization SSB
transceiver that works at HF and how to connect it to the modem of Phase Shift
Keying (PSK). This SSB transceiver uses amateurish radio frequency at 3,8 MHz
and 10 watt emittance.
This SSB transceiver can be used for audio and data communication, by
using input microphone and output speaker, also PTT from SSB transceiver that
connected to PSK modem.
ii
DAFTAR ISI
ABSTRAK …………………………………..…….…….…………….
i
ABSTRACT ……………………………………………………………
ii
KATA PENGANTAR ……………...…………………………………
iii
DAFTAR ISI…….………………………………...………………….
v
DAFTAR TABEL …………………………………………..………..
vii
DAFTAR GAMBAR.……………………………………..….………
viii
DAFTAR LAMPIRAN……………………………………………….
x
BAB 1 PENDAHULUAN
1.1
Latar Belakang ………..……………………………..………
1
1.2
Perumusan Masalah ...………………………….……….……
1
1.3
Tujuan Penulisan ………………….…………..….……….…
2
1.4
Pembatasan Masalah ..…………………………….……… ..
2
1.5
Sistematika Penulisan ………………………..……………....
2
BAB 2 LANDASAN TEORI
2.1
Gelombang Radio ………..…………………………………
4
2.2
Frekuensi Radio ……..…………………………………….
5
2.3
Modulasi Sinyal ……………………………………………
6
2.3.1
Modulasi Amplitudo …………..……………………....
6
2.3.2
Sistem Modulasi SSB ….……………..……………....
8
2.4
Pemancar (Transmitter) Sistem SSB ……….…….……… ..
9
2.5
Penerima (Receiver) Sistem SSB…….………..………...
10
2.6
Balanced Modulator …………………………………….
10
2.7 Osilator ………………………………………………….
12
2.8
Filter …………………………………………………….
13
2.9 Detektor …………………………………………………
16
BAB 3 PERANCANGAN DAN REALISASI
3.1 Pemancar ………….……………………………………..
17
3.1.1
Penguat Mic (Pre Amp Mic) ………...…….………..
18
3.1.2
Balanced Modulator (BM1) ………….……….….
19
v
3.1.3
Osilator Lokal (OL1) …………………………………
20
3.1.4
Filter Upper Side Band 1 ……………………………
21
3.1.5
Balanced Modulator 2 (BM 2) sebagai Mixer …….
22
3.1.6
Osilator Lokal 2 (OL 2) ……………………………..
22
3.1.7
Filter Upper Side Band 2 ……………………………
23
3.1.8
Penguat Daya RF ……………………………………
24
3.1.8.1 RF Pre Driver …………………………………
24
3.1.8.2 RF Driver ……………………………………..
26
3.1.8.3
Rangkaian Penguat Akhir (RF Final) …………
27
Penerima (Receiver) …………………………………….
29
3.2.1 RF Amplifier …………………………………………
30
3.2.2 RF Mixer …………………………………………….
30
3.2.3
Osilator Lokal 2 (OL 2) ……………………………..
31
3.2.4
Filter USB I …………………………………………
31
3.2.5
Intermediate Frequency ……………….……………
31
3.2
3.2.6 Detektor ……………………………………………
32
3.2.7
Osilator Lokal 1 (OL 1) ……………………………
32
3.2.8 Penguat Audio / Suara ……………………………..
32
3.2.9
Automatic Gain Control (AGC) ……………………
33
Rangkaian PTT …………………………………………
34
3.3
BAB 4 PENGUJIAN DAN ANALISA
4.1
Pengujian Transceiver SSB ……………..…….……...
35
4.1.1
Pengujian Bagian Pemancar ………………………….
37
4.1.2
Pengujian Bagian Penerima ……………………….
44
4.2
Penghubungan Transceiver dengan Modem PSK ………
47
BAB 5 KESIMPULAN DAN SARAN
5.1
Kesimpulan…………………………………….…….
49
5.2
Saran…..………………………………..…………....
49
DAFTAR PUSTAKA
LAMPIRAN
vi
DAFTAR TABEL
Tabel
Judul
Halaman
2.1
Spektrum Frekuensi
5
3.1
Filter Chebychev
28
vii
DAFTAR GAMBAR
Gambar
Judul
Halaman
2.1
Modulasi Amplitudo
7
2.2
Pemancar (Transmitter) Sistem SSB
9
2.3
Penerima (Receiver) Sistem SSB
10
2.4
Balanced Modulator IC
11
2.5
Osilator colpitts
13
2.6
Osilator Kristal.
13
2.7
Low pass filter
14
2.8
High pass filter
14
2.9
Band pass filter
15
2.10
Band stop filter
15
2.11
Detektor
16
3.1
Diagram Blok Transceiver SSB
17
3.2
Rangkaian Pre Amp Mic dan Tone Control
18
3.3
IC LM 1496
19
3.4
Rangkaian Balanced Modulator
20
3.5
Rangkaian Osilator Lokal 1
21
3.6
Filter Upper Side Band
21
3.7
Rangkaian Balanced Modulator 2
22
3.8
Rangkaian Osilator Lokal 2
23
3.9
Rangkaian Filter Upper Side Band 2
24
3.10
Diagram Blok Penguat Daya
24
3.11
Rangkaian RF Pre Driver
26
3.12
Rangkaian RF Driver
27
3.13
Rangkaian LPF Normalisasi
27
3.14
Rangkaian LPF dengan fc=5,56 MHz
29
3.15
Rangkaian Penguat Akhir dan Filter
29
3.16
Rangkaian RF Amp
30
3.17
Rangkaian RF Mixer
30
viii
3.18
Rangkaian Intermediate Frequency
31
3.19
Detektor
32
3.20
Rangkaian Penguat Audio
33
3.21
Rangkaian AGC
33
3.22
Rangkaian PTT
34
4.1
Diagram Blok Pengujian Transceiver
36
4.2
Hasil Pengukuran TP 1 dengan Osiloskop
37
4.3
Sinyal Informasi dengan Frekuensi 2 KHz
37
4.4
Hasil Pengukuran TP 2 dengan Frekuensi Counter
38
4.5
Hasil Pengukuran TP 2 dengan Osiloskop
38
4.6
Sinyal Carrier dengan Frekuensi 455 KHz
38
4.7
Sinyal Hasil Modulasi
39
4.8
Hasil Pengukuran TP 4 dengan Frekuensi Counter
40
4.9
Hasil Pengukuran TP 4 dengan Spectrum Analyzer
40
4.10
Spektrum Sinyal Carrier dengan Frekuensi 3.4 MHz
40
4.11
Hasil Pengukuran TP 5 dengan Spectrum Analyzer
41
4.12
Hasil Pengukuran TP 5 dengan Osiloskop
41
4.13
Spektrum Sinyal USB dengan Frekuensi 3,857 MHz
41
4.14
Hasil Pengukuran TP 6 dengan Power Meter
42
4.15
Sketsa Hasil Pengukuran TP 6
42
4.16
Hasil Pengukuran TP 7 dengan Power Meter
43
4.17
Sketsa Hasil Pengukuran TP 7
43
4.18
Hasil Pengukuran TP 8 dengan SWR Meter
44
4. 19
Sketsa Hasil Pengukuran TP 8
44
4.20
Signal Generator dengan Frekuensi 3,857 MHz
45
4.21
Spektrum Sinyal USB
45
4.22
Spektrum dari TP 11
46
4.23
Spektrum dari TP 12
46
4.24
Sinyal Informasi dari Output Detektor
47
4.25
Sinyal Informasi 2 KHz
47
4.26
Penghubungan Transceiver dengan Modem PSK
48
ix
DAFTAR LAMPIRAN
Lampiran
Judul
Halaman
A
Data Sheet Transistor 2SK 192
A-1
B
Data Sheet Transistor 2SC 828
B-1
C
Data Sheet Transistor 2SC 829
C-1
D
Data Sheet Transistor 2SC 1383
D-1
E
Data Sheet Transistor 2SC 1162
E-1
F
Data Sheet Transistor 2SC 1969
F-1
G
Data Sheet IC LM 741
G-1
H
Data Sheet IC LM 386
H-1
I
Data Sheet IC LM 1496
I-1
J
Layout PCB
J-1
x
LM386
Low Voltage Audio Power Amplifier
General Description
Features
The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to
keep external part count low, but the addition of an external
resistor and capacitor between pins 1 and 8 will increase the
gain to any value up to 200.
n
n
n
n
n
n
n
n
n
The inputs are ground referenced while the output is automatically biased to one half the supply voltage. The quiescent power drain is only 24 milliwatts when operating from a
6 volt supply, making the LM386 ideal for battery operation.
Battery operation
Minimum external parts
Wide supply voltage range: 4V–12V or 5V–18V
Low quiescent current drain: 4 mA
Voltage gains from 20 to 200
Ground referenced input
Self-centering output quiescent voltage
Low distortion
Available in 8 pin MSOP package
Applications
n
n
n
n
n
n
n
n
AM-FM radio amplifiers
Portable tape player amplifiers
Intercoms
TV sound systems
Line drivers
Ultrasonic drivers
Small servo drivers
Power converters
Equivalent Schematic and Connection Diagrams
Small Outline,
Molded Mini Small Outline,
and Dual-In-Line Packages
DS006976-2
DS006976-1
© 2000 National Semiconductor Corporation
DS006976
Top View
Order Number LM386M-1,
LM386MM-1, LM386N-1,
LM386N-3 or LM386N-4
See NS Package Number
M08A, MUA08A or N08E
www.national.com
LM386 Low Voltage Audio Power Amplifier
January 2000
LM386
Absolute Maximum Ratings (Note 2)
Dual-In-Line Package
Soldering (10 sec)
+260˚C
Small Outline Package
(SOIC and MSOP)
Vapor Phase (60 sec)
+215˚C
Infrared (15 sec)
+220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Thermal Resistance
37˚C/W
θJC (DIP)
107˚C/W
θJA (DIP)
35˚C/W
θJC (SO Package)
172˚C/W
θJA (SO Package)
210˚C/W
θJA (MSOP)
56˚C/W
θJC (MSOP)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
(LM386N-1, -3, LM386M-1)
Supply Voltage (LM386N-4)
Package Dissipation (Note 3)
(LM386N)
(LM386M)
(LM386MM-1)
Input Voltage
Storage Temperature
Operating Temperature
Junction Temperature
Soldering Information
15V
22V
1.25W
0.73W
0.595W
± 0.4V
−65˚C to +150˚C
0˚C to +70˚C
+150˚C
Electrical Characteristics (Notes 1, 2)
TA = 25˚C
Parameter
Conditions
Min
Typ
Max
Units
12
V
Operating Supply Voltage (VS)
LM386N-1, -3, LM386M-1, LM386MM-1
4
LM386N-4
Quiescent Current (IQ)
5
VS = 6V, VIN = 0
4
18
V
8
mA
Output Power (POUT)
LM386N-4
VS = 6V, RL = 8Ω, THD = 10%
VS = 9V, RL = 8Ω, THD = 10%
VS = 16V, RL = 32Ω, THD = 10%
Voltage Gain (AV)
VS = 6V, f = 1 kHz
LM386N-1, LM386M-1, LM386MM-1
LM386N-3
Bandwidth (BW)
Total Harmonic Distortion (THD)
Power Supply Rejection Ratio (PSRR)
10 µF from Pin 1 to 8
VS = 6V, Pins 1 and 8 Open
VS = 6V, RL = 8Ω, POUT = 125 mW
f = 1 kHz, Pins 1 and 8 Open
VS = 6V, f = 1 kHz, CBYPASS = 10 µF
250
325
500
700
mW
mW
700
1000
mW
26
dB
46
dB
300
kHz
0.2
%
50
dB
50
kΩ
250
nA
Pins 1 and 8 Open, Referred to Output
Input Resistance (RIN)
Input Bias Current (IBIAS)
VS = 6V, Pins 2 and 3 Open
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 3: For operation in ambient temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and 1) a thermal resistance of 107˚C/W junction to ambient for the dual-in-line package and 2) a thermal resistance of 170˚C/W for the small outline package.
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2
LM386
Application Hints
INPUT BIASING
GAIN CONTROL
To make the LM386 a more versatile amplifier, two pins (1
and 8) are provided for gain control. With pins 1 and 8 open
the 1.35 kΩ resistor sets the gain at 20 (26 dB). If a capacitor
is put from pin 1 to 8, bypassing the 1.35 kΩ resistor, the
gain will go up to 200 (46 dB). If a resistor is placed in series
with the capacitor, the gain can be set to any value from 20
to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1 to ground.
The schematic shows that both inputs are biased to ground
with a 50 kΩ resistor. The base current of the input transistors is about 250 nA, so the inputs are at about 12.5 mV
when left open. If the dc source resistance driving the LM386
is higher than 250 kΩ it will contribute very little additional
offset (about 2.5 mV at the input, 50 mV at the output). If the
dc source resistance is less than 10 kΩ, then shorting the
unused input to ground will keep the offset low (about 2.5 mV
at the input, 50 mV at the output). For dc source resistances
between these values we can eliminate excess offset by putting a resistor from the unused input to ground, equal in
value to the dc source resistance. Of course all offset problems are eliminated if the input is capacitively coupled.
When using the LM386 with higher gains (bypassing the
1.35 kΩ resistor between pins 1 and 8) it is necessary to bypass the unused input, preventing degradation of gain and
possible instabilities. This is done with a 0.1 µF capacitor or
a short to ground depending on the dc source resistance on
the driven input.
Additional external components can be placed in parallel
with the internal feedback resistors to tailor the gain and frequency response for individual applications. For example,
we can compensate poor speaker bass response by frequency shaping the feedback path. This is done with a series
RC from pin 1 to 5 (paralleling the internal 15 kΩ resistor).
For 6 dB effective bass boost: R ≅ 15 kΩ, the lowest value
for good stable operation is R = 10 kΩ if pin 8 is open. If pins
1 and 8 are bypassed then R as low as 2 kΩ can be used.
This restriction is because the amplifier is only compensated
for closed-loop gains greater than 9.
3
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LM386
Typical Performance Characteristics
Quiescent Supply Current
vs Supply Voltage
Power Supply Rejection Ratio
(Referred to the Output)
vs Frequency
Peak-to-Peak Output Voltage
Swing vs Supply Voltage
DS006976-5
DS006976-13
DS006976-12
Voltage Gain vs Frequency
Distortion vs Frequency
DS006976-15
DS006976-14
Device Dissipation vs Output
Power — 4Ω Load
Device Dissipation vs Output
Power — 8Ω Load
DS006976-17
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Distortion vs Output Power
DS006976-18
4
DS006976-16
Device Dissipation vs Output
Power — 16Ω Load
DS006976-19
LM386
Typical Applications
Amplifier with Gain = 20
Minimum Parts
Amplifier with Gain = 200
DS006976-4
DS006976-3
Amplifier with Gain = 50
Low Distortion Power Wienbridge Oscillator
DS006976-6
DS006976-7
Square Wave Oscillator
Amplifier with Bass Boost
DS006976-8
DS006976-9
5
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LM386
Typical Applications
(Continued)
Frequency Response with Bass Boost
DS006976-10
AM Radio Power Amplifier
DS006976-11
Note 4: Twist Supply lead and supply ground very tightly.
Note 5: Twist speaker lead and ground very tightly.
Note 6: Ferrite bead in Ferroxcube K5-001-001/3B with 3 turns of wire.
Note 7: R1C1 band limits input signals.
Note 8: All components must be spaced very closely to IC.
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6
LM386
Physical Dimensions
inches (millimeters) unless otherwise noted
SO Package (M)
Order Number LM386M-1
NS Package Number M08A
7
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LM386
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
8-Lead (0.118” Wide) Molded Mini Small Outline Package
Order Number LM386MM-1
NS Package Number MUA08A
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8
LM386 Low Voltage Audio Power Amplifier
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (N)
Order Number LM386N-1, LM386N-3 or LM386N-4
NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 1 80-530 85 85
English Tel: +49 (0) 1 80-532 78 32
Français Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: sea.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
LM741
Operational Amplifier
General Description
The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plug-in replacements
for the 709C, LM201, MC1439 and 748 in most applications.
The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and
output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations.
The LM741C/LM741E are identical to the LM741/LM741A
except that the LM741C/LM741E have their performance
guaranteed over a 0˚C to +70˚C temperature range, instead
of −55˚C to +125˚C.
Schematic Diagram
DS009341-1
Offset Nulling Circuit
DS009341-7
© 1999 National Semiconductor Corporation
DS009341
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LM741 Operational Amplifier
May 1998
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 6)
LM741A
LM741E
LM741
LM741C
± 22V
± 22V
± 22V
± 18V
Supply Voltage
Power Dissipation (Note 2)
500 mW
500 mW
500 mW
500 mW
± 30V
± 30V
± 30V
± 30V
Differential Input Voltage
± 15V
± 15V
± 15V
± 15V
Input Voltage (Note 3)
Output Short Circuit Duration
Continuous
Continuous
Continuous
Continuous
Operating Temperature Range
−55˚C to +125˚C
0˚C to +70˚C
−55˚C to +125˚C
0˚C to +70˚C
Storage Temperature Range
−65˚C to +150˚C
−65˚C to +150˚C
−65˚C to +150˚C
−65˚C to +150˚C
Junction Temperature
150˚C
100˚C
150˚C
100˚C
Soldering Information
N-Package (10 seconds)
260˚C
260˚C
260˚C
260˚C
J- or H-Package (10 seconds)
300˚C
300˚C
300˚C
300˚C
M-Package
Vapor Phase (60 seconds)
215˚C
215˚C
215˚C
215˚C
Infrared (15 seconds)
215˚C
215˚C
215˚C
215˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 7)
400V
400V
400V
400V
Electrical Characteristics (Note 4)
Parameter
Conditions
LM741A/LM741E
Min
Input Offset Voltage
Typ
Max
0.8
3.0
LM741
Min
LM741C
Typ
Max
1.0
5.0
Min
Units
Typ
Max
2.0
6.0
TA = 25˚C
RS ≤ 10 kΩ
RS ≤ 50Ω
mV
mV
TAMIN ≤ TA ≤ TAMAX
RS ≤ 50Ω
4.0
mV
RS ≤ 10 kΩ
6.0
Average Input Offset
7.5
15
mV
µV/˚C
Voltage Drift
Input Offset Voltage
TA = 25˚C, VS = ± 20V
± 10
± 15
± 15
mV
Adjustment Range
Input Offset Current
TA = 25˚C
3.0
TAMIN ≤ TA ≤ TAMAX
Average Input Offset
30
20
200
70
85
500
20
200
nA
300
nA
0.5
nA/˚C
Current Drift
Input Bias Current
TA = 25˚C
Input Resistance
TAMIN ≤ TA ≤ TAMAX
TA = 25˚C, VS = ± 20V
TAMIN ≤ TA ≤ TAMAX,
VS = ± 20V
Input Voltage Range
30
1.0
80
6.0
500
80
1.5
0.3
2.0
0.3
2.0
0.5
500
nA
0.8
µA
MΩ
MΩ
± 12
TA = 25˚C
TAMIN ≤ TA ≤ TAMAX
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80
0.210
± 12
2
± 13
± 13
V
V
Electrical Characteristics (Note 4)
Parameter
(Continued)
Conditions
LM741A/LM741E
Min
Large Signal Voltage Gain
TA = 25˚C, RL ≥ 2 kΩ
VS = ± 20V, VO = ± 15V
VS = ± 15V, VO = ± 10V
Typ
Max
LM741
Min
Typ
50
200
LM741C
Max
Min
Typ
20
200
Units
Max
50
V/mV
V/mV
TAMIN ≤ TA ≤ TAMAX,
RL ≥ 2 kΩ,
VS = ± 20V, VO = ± 15V
VS = ± 15V, VO = ± 10V
VS = ± 5V, VO = ± 2V
Output Voltage Swing
32
V/mV
25
RL ≥ 10 kΩ
10
V/mV
± 16
± 15
V
V
RL ≥ 10 kΩ
± 12
± 10
RL ≥ 2 kΩ
TA = 25˚C
10
Current
TAMIN ≤ TA ≤ TAMAX
10
Common-Mode
TAMIN ≤ TA ≤ TAMAX
RS ≤ 10 kΩ, VCM = ± 12V
Rejection Ratio
RS ≤ 50Ω, VCM = ± 12V
Supply Voltage Rejection
Ratio
25
35
± 14
± 13
± 12
± 10
25
± 14
± 13
V
25
mA
40
mA
70
80
95
86
96
90
70
90
dB
RS ≤ 10 kΩ
TA = 25˚C, Unity Gain
77
96
77
96
dB
µs
0.25
0.8
0.3
0.3
Overshoot
6.0
20
5
5
Slew Rate
Supply Current
Power Consumption
LM741A
dB
dB
Rise Time
Bandwidth (Note 5)
V
TAMIN ≤ TA ≤ TAMAX,
VS = ± 20V to VS = ± 5V
RS ≤ 50Ω
Transient Response
V/mV
VS = ± 20V
RL ≥ 2 kΩ
VS = ± 15V
Output Short Circuit
15
TA = 25˚C
TA = 25˚C, Unity Gain
TA = 25˚C
0.437
1.5
0.3
0.7
TA = 25˚C
VS = ± 20V
VS = ± 15V
80
VS = ± 20V
TA = TAMIN
%
MHz
0.5
0.5
V/µs
1.7
2.8
1.7
2.8
50
85
50
85
150
mA
mW
mW
165
mW
135
mW
LM741E
TA = TAMAX
VS = ± 20V
TA = TAMIN
150
mW
150
mW
LM741
TA = TAMAX
VS = ± 15V
TA = TAMIN
TA = TAMAX
60
100
mW
45
75
mW
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
3
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Electrical Characteristics (Note 4)
(Continued)
Note 2: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under “Absolute Maximum Ratings”). Tj = TA + (θjA PD).
Thermal Resistance
θjA (Junction to Ambient)
θjC (Junction to Case)
Cerdip (J)
DIP (N)
HO8 (H)
SO-8 (M)
100˚C/W
100˚C/W
170˚C/W
195˚C/W
N/A
N/A
25˚C/W
N/A
Note 3: For supply voltages less than ± 15V, the absolute maximum input voltage is equal to the supply voltage.
Note 4: Unless otherwise specified, these specifications apply for VS = ± 15V, −55˚C ≤ TA ≤ +125˚C (LM741/LM741A). For the LM741C/LM741E, these specifications are limited to 0˚C ≤ TA ≤ +70˚C.
Note 5: Calculated value from: BW (MHz) = 0.35/Rise Time(µs).
Note 6: For military specifications see RETS741X for LM741 and RETS741AX for LM741A.
Note 7: Human body model, 1.5 kΩ in series with 100 pF.
Connection Diagram
Metal Can Package
Ceramic Dual-In-Line Package
DS009341-2
Note 8: LM741H is available per JM38510/10101
DS009341-5
Order Number LM741H, LM741H/883 (Note 8),
LM741AH/883 or LM741CH
See NS Package Number H08C
Note 9: also available per JM38510/10101
Note 10: also available per JM38510/10102
Order Number LM741J-14/883 (Note 9),
LM741AJ-14/883 (Note 10)
See NS Package Number J14A
Dual-In-Line or S.O. Package
Ceramic Flatpak
DS009341-6
DS009341-3
Order Number LM741W/883
See NS Package Number W10A
Order Number LM741J, LM741J/883,
LM741CM, LM741CN or LM741EN
See NS Package Number J08A, M08A or N08E
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4
Physical Dimensions
inches (millimeters) unless otherwise noted
Metal Can Package (H)
Order Number LM741H, LM741H/883, LM741AH/883, LM741CH or LM741EH
NS Package Number H08C
Ceramic Dual-In-Line Package (J)
Order Number LM741CJ or LM741J/883
NS Package Number J08A
5
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Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Ceramic Dual-In-Line Package (J)
Order Number LM741J-14/883 or LM741AJ-14/883
NS Package Number J14A
Small Outline Package (M)
Order Number LM741CM
NS Package Number M08A
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6
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Dual-In-Line Package (N)
Order Number LM741CN or LM741EN
NS Package Number N08E
7
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LM741 Operational Amplifier
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
10-Lead Ceramic Flatpak (W)
Order Number LM741W/883
NS Package Number W10A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 1 80-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 1 80-530 85 85
English Tel: +49 (0) 1 80-532 78 32
Français Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: sea.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
LM1596/LM1496 Balanced Modulator-Demodulator
General Description
Features
The LM1596/LM1496 are doubled balanced modulator-demodulators which produce an output voltage proportional to
the product of an input (signal) voltage and a switching (carrier) signal. Typical applications include suppressed carrier
modulation, amplitude modulation, synchronous detection,
FM or PM detection, broadband frequency doubling and
chopping.
The LM1596 is specified for operation over the b55§ C to
a 125§ C military temperature range. The LM1496 is specified for operation over the 0§ C to a 70§ C temperature range.
Y
Y
Y
Y
Y
Excellent carrier suppression
65 dB typical at 0.5 MHz
50 dB typical at 10 MHz
Adjustable gain and signal handling
Fully balanced inputs and outputs
Low offset and drift
Wide frequency response up to 100 MHz
Schematic and Connection Diagrams
Metal Can Package
TL/H/7887 – 2
Top View
Note: Pin 10 is connected electrically to the
case through the device substrate.
Order Number LM1496H or LM1596H
See NS Package Number H08C
TL/H/7887 – 1
Dual-In-Line and Small Outline Packages
Numbers in parentheses show DIP connections.
TL/H/7887 – 3
Order Number LM1496M or LM1496N
See NS Package Number M14A or N14A
C1995 National Semiconductor Corporation
TL/H/7887
RRD-B30M115/Printed in U. S. A.
LM1596/LM1496 Balanced Modulator-Demodulator
February 1995
Absolute Maximum Ratings
Soldering Information
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Internal Power Dissipation (Note 1)
Applied Voltage (Note 2)
Differential Input Signal (V7 b V8)
# Dual-In-Line Package
Soldering (10 seconds)
500 mW
30V
260§ C
# Small Outline Package
Vapor Phase (60 seconds)
215§ C
Infrared (15 seconds)
220§ C
See AN-450 ‘‘Surface Mounting Methods and their effects
on Product Reliability’’ for other methods of soldering surface mount devices.
g 5.0V
g (5 a I5R0)V
Differential Input Signal (V4 b V1)
5.0V
Input Signal (V2 b V1, V3 b V4)
Bias Current (I5)
12 mA
Operating Temperature Range LM1596 b55§ C to a 125§ C
LM1496
0§ C to a 70§ C
b 65§ C to a 150§ C
Storage Temperature Range
Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuit)
Parameter
LM1596
Conditions
LM1496
Units
Min Typ Max Min Typ Max
Carrier Feedthrough
Carrier Suppression
Transadmittance Bandwidth
VC e 60 mVrms sine wave
fC e 1.0 kHz, offset adjusted
VC e 60 mVrms sine wave
fC e 10 kHz, offset adjusted
VC e 300 mVpp square wave
fC e 1.0 kHz, offset adjusted
VC e 300 mVpp square wave
fC e 1.0 kHz, not offset adjusted
fS e 10 kHz, 300 mVrms
fC e 500 kHz, 60 mVrms sine wave offset adjusted
fS e 10 kHz, 300 mVrms
fC e 10 MHz, 60 mVrms sine wave offset adjusted
50
RL e 50X
Carrier Input Port, VC e 60 mVrms sine wave
fS e 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS e 300 mVrms sine wave
V7 b V8 e 0.5Vdc
40
40
mVrms
140
140
mVrms
0.04
0.2
0.04
0.2
mVrms
20
100
20
150
mVrms
65
50
65
dB
50
50
dB
300
300
MHz
80
80
MHz
3.5
V/V
Voltage Gain, Signal Channel
VS e 100 mVrms, f e 1.0 kHz
V7 b V8 e 0.5 Vdc
Input Resistance, Signal Port
f e 5.0 MHz
V7 b V8 e 0.5 Vdc
200
200
kX
Input Capacitance, Signal Port
f e 5.0 MHz
V7 b V8 e 0.5 Vdc
2.0
2.0
pF
40
40
kX
5.0
5.0
pF
2.5
Single Ended Output Resistance f e 10 MHz
3.5
2.5
Single Ended Output
Capacitance
f e 10 MHz
Input Bias Current
(I1 a I4)/2
12
25
12
30
Input Bias Current
(I7 a I8)/2
12
25
12
30
mA
Input Offset Current
(I1 b I4)
0.7
5.0
0.7
5.0
mA
Input Offset Current
(I7 b I8)
0.7
5.0
5.0
5.0
Average Temperature
Coefficient of Input
Offset Current
(b55§ C k TA k a 125§ C)
(0§ C k TA k a 70§ C)
2.0
Output Offset Current
(I6 b I9)
14
Average Temperature
Coefficient of Output
Offset Current
(b55§ C k TA k a 125§ C)
(0§ C k TA k a 70§ C)
90
14
90
2
mA
nA/§ C
nA/§ C
2.0
50
mA
60
mA
nA/§ C
nA/§ C
Electrical Characteristics (TA e 25§ C, unless otherwise specified, see test circuit) (Continued)
Parameter
LM1596
Conditions
Min
Signal Port Common Mode
Input Voltage Range
fS e 1.0 kHz
Signal Port Common Mode
Rejection Ratio
V7 b V8 e 0.5 Vdc
Typ
LM1496
Max
Min
Typ
Units
Max
5.0
5.0
Vp-p
b 85
b 85
dB
Common Mode Quiescent
Output Voltage
8.0
8.0
Vdc
Differential Output Swing
Capability
8.0
8.0
Vp-p
Positive Supply Current
(I6 a Ig)
2.0
3.0
2.0
3.0
mA
Negative Supply Current
(I10)
3.0
4.0
3.0
4.0
mA
Power Dissipation
33
33
mW
Note 1: LM1596 rating applies to case temperatures to a 125§ C; derate linearly at 6.5 mW/§ C for ambient temperature above 75§ C. LM1496 rating applies to case
temperatures to a 70§ C.
Note 2: Voltage applied between pins 6-7, 8-1, 9-7, 9-8, 7-4, 7-1, 8-4, 6-8, 2-5, 3-5.
Note 3: Refer to rets1596x drawing for specifications of military LM1596H versions.
Typical Performance Characteristics
Carrier Suppression vs
Carrier Input Level
Carrier Suppression vs
Frequency
Carrier Feedthrough vs
Frequency
Sideband Output vs
Carrier Levels
Sideband and Signal Port
Transadmittances vs
Frequency
Signal-Port Frequency
Response
TL/H/7887 – 5
3
Typical Application and Test Circuit
Suppressed Carrier Modulator
Numbers in parentheses show DIP connections.
TL/H/7887 – 4
Note: S1 is closed for ‘‘adjusted’’ measurements.
SSB Product Detector
Numbers in parentheses show DIP connections.
TL/H/7887 – 6
This figure shows the LM1596 used as a single sideband (SSB) suppressed carrier demodulator (product detector). The carrier signal is applied to the carrier input
port with sufficient amplitude for switching operation. A carrier input level of 300 mVrms is optimum. The composite SSB signal is applied to the signal input port
with an amplitude of 5.0 to 500 mVrms. All output signal components except the desired demodulated audio are filtered out, so that an offset adjustment is not
required. This circuit may also be used as an AM detector by applying composite and carrier signals in the same manner as described for product detector
operation.
4
Typical Applications (Continued)
Broadband Frequency Doubler
Numbers in parentheses show DIP connections.
TL/H/7887 – 7
The frequency doubler circuit shown will double low-level signals with low distortion. The value of C should be chosen for low reactance at the operating frequency.
Signal level at the carrier input must be less than 25 mV peak to maintain operation in the linear region of the switching differential amplifier. Levels to 50 mV peak
may be used with some distortion of the output waveform. If a larger input signal is available a resistive divider may be used at the carrier input, with full signal
applied to the signal input.
5
6
Physical Dimensions inches (millimeters)
Metal Can Package (H)
Order Number LM1496H or LM1596H
NS Package Number H08C
Molded Small Outline Package (M)
Order Number LM1496M
NS Package Number M14A
7
LM1596/LM1496 Balanced Modulator-Demodulator
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number LM1496N
NS Package Number N14A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Transistor
2SC829
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
■ Features
Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios.
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
+0.2
0.45 –0.1
0.45 –0.1
1.27
1.27
2.3±0.2
■ Absolute Maximum Ratings
13.5±0.5
●
4.0±0.2
5.1±0.2
5.0±0.2
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Symbol
Parameter
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
Forward current transfer ratio
hFE*
VCE = 10V, IC = 1mA
70
150
Transition frequency
fT
VCB = 10V, IC = 1mA, f = 200MHz
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
Reverse transfer impedance
Zrb
VCB = 10V, IE = –1mA, f = 2MHz
*h
FE
V
250
MHz
230
1.3
1.6
pF
60
Ω
Rank classification
Rank
B
C
hFE
70 ~ 160
110 ~ 250
1
Transistor
2SC829
PC — Ta
IC — VCE
60
IB=100µA
350
300
250
200
150
100
80µA
8
60µA
6
40µA
4
20µA
2
40
25˚C
30
Ta=75˚C
–25˚C
20
10
50
0
60
80 100 120 140 160
0
0
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
100
80
60
40
20
0
1.2
1.8
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
3
fT — IE
10
30
Reverse transfer impedance Zrb (Ω)
400
VCB=10V
6V
200
100
–1
–3
–10
–30
Emitter current IE (mA)
–100
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.1
0.3
60
50
40
VCB=6V
10V
20
10
– 0.3
–1
1
3
10
30
100
Cre — VCE
70
0
– 0.1
2.0
Collector current IC (mA)
f=2MHz
Ta=25˚C
30
1.6
250
Zrb — IE
500
1.2
VCE=10V
100
80
Ta=25˚C
0.8
300
IB/IB=10
Collector current IC (mA)
600
0
– 0.1 – 0.3
0.4
Base to emitter voltage VBE (V)
hFE — IC
100
Base to emitter voltage VBE (V)
300
0
VCE(sat) — IC
120
0.6
18
Collector to emitter voltage VCE (V)
IB — VBE
0
12
Forward current transfer ratio hFE
40
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
20
Ambient temperature Ta (˚C)
Base current IB (µA)
50
Collector current IC (mA)
10
400
0
Transition frequency fT (MHz)
VCE=10V
Ta=25˚C
450
0
2
IC — VBE
12
Collector current IC (mA)
Collector power dissipation PC (mW)
500
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
2SC829
Transistor
Cob — VCB
bie — gie
1.0
0.8
0.6
0.4
Reverse transfer susceptance bre (mS)
1.2
0
yie=gie+jbie
VCE=10V
Input susceptance bie (mS)
Collector output capacitance Cob (pF)
IE=–1mA
f=1MHz
Ta=25˚C
1.4
100
10
6
25
4
10.7
IE=– 0.4mA
–1mA
–2mA
–4mA
–7mA
2
f=0.45MHz
0
1
3
10
30
0
100
Collector to base voltage VCB (V)
4
100
58
–1mA
–4mA
25
58
100
–40
100
58
f=10.7MHz
25
–60
58
IE=–7mA
–80
–100
1.0
0.8
58
25
40
60
–4mA
–2.0
–2.5
–3.0
– 0.5
100
IE=–7mA
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
80
Forward transfer conductance
100
gfe (mS)
–7mA
–4mA
–2mA
–1mA
IE=– 0.1mA
0.4
10.7
0.2
yoe=goe+jboe
VCE=10V
f=0.45MHz
0
20
–2mA
– 0.4mA
0.6
yfe=gfe+jbfe
VCE=10V
–120
0
–1.5
100
10.7
–2mA
100
20
– 0.4mA
–1mA
1.2
0.45
Output susceptance boe (mS)
– 0.1mA
–20
25
16
58
–1.0
boe — goe
0.45
10.7
–0.4mA
12
Input conductance gie (mS)
bfe — gfe
0
8
f=0.45MHz
10.7
25
yre=gre+jbre
VCE=10V
– 0.5
58
8
0.2
0
Forward transfer susceptance bfe (mS)
bre — gre
12
1.6
0
0.2
0.4
0.6
0.8
1.0
Output conductance goe (mS)
3
2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
35
V
Collector to emitter voltage
VCEO
35
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
2.5
A
Collector peak current
I C(peak)
3
A
Collector power dissipation
PC
0.75
W
10
W
PC *
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
35
—
—
V
I C = 1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
35
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
20
µA
VCB = 35 V, IE = 0
60
—
320
VCE = 2 V, IC = 0.5 A
hFE
20
—
—
VCE = 2 V, IC = 1.5 A
(pulse test)
Base to emitter voltage
VBE
—
0.93
1.5
V
VCE = 2 V, IC = 1.5 A
(pulse test)
Collector to emitter saturation
voltage
VCE(sat)
—
0.5
1.0
V
I C = 2 A, IB = 0.2 A (pulse test)
Gain bandwidth product
fT
—
180
—
MHz
VCE = 2 V, IC = 0.2 A
DC current transfer ratio
Note:
hFE*
1
1. The 2SC1162 is grouped by h FE as follows.
B
C
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation Curve
Area of Safe Operation
5
0.75
TC = 25°C
0.6
1.0
W
0.2
10
0.4
2
=
Collector current IC (A)
IC(max)(DC Operation)
PC
Collector power dissipation PC (W)
0.8
0.5
0.2
0.1
0
2
50
100
150
Ambient temperature Ta (°C)
200
1
5
20
50
2
10
Collector to emitter voltage VCE (V)
2SC1162
Typical Output Characteristics
Maximum Collector Dissipation Curve
16
TC = 25°C
Collector current IC (A)
Collector power dissipation PC (W)
2.0
12
8
4
17
1.6
15
1.2
12
10
0.8
8
6
4
0.4
50
100
150
200
Case temperature TC (°C)
0
1
3
4
2
5
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
2.0
280
Collector Current IC (A)
1.0
0.5
25
TC = 75°C
–25
0.1
0.05
0.02
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to emitter voltage VBE (V)
DC current transfer ratio hFE
VCE = 2 V
0
20
2 mA
IB = 0
0
0.2
24
240
VCE = 2 V
200
160
TC = 75°C
120
80
25
–25
40
0
0.01
0.3
0.03
0.1
1.0
Collector current IC (A)
3.0
3
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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For further information write to:
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Unit: mm
Complementary to 2SA683 and 2SA684
4.9±0.2
5.9±0.2
Low collector to emitter saturation voltage VCE(sat).
Complementary pair with 2SA683 and 2SA684.
Collector to
2SC1383
base voltage
2SC1384
Collector to
Ratings
2SC1383
30
VCBO
25
V
50
+0.2
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
voltage
2SC1384
Collector to emitter
2SC1383
voltage
2SC1384
Emitter to base voltage
Conditions
VCBO
IC = 10µA, IE = 0
VCEO
IC = 2mA, IB = 0
VEBO
IE = 10µA, IC = 0
hFE1
Forward current transfer ratio
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
min
typ
VCB = 20V, IE = 0
ICBO
2SC1383
1.27
(Ta=25˚C)
Symbol
Collector to base
0.45–0.1
1.27
1
Parameter
Collector cutoff current
+0.2
0.45–0.1
Emitter to base voltage
■ Electrical Characteristics
2.54±0.15
Unit
V
60
VCEO
emitter voltage 2SC1384
+0.3
(Ta=25˚C)
Symbol
Parameter
0.7–0.2
0.7±0.1
■ Absolute Maximum Ratings
13.5±0.5
●
3.2
●
8.6±0.2
■ Features
*1
VCE = 10V, IC =
500mA*2
max
Unit
0.1
µA
30
V
60
25
V
50
V
5
85
160
50
100
340
hFE2
VCE = 5V, IB = 1A*2
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 50mA*2
0.2
0.4
V
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB = 50mA*2
0.85
1.2
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
MHz
20
*2
*1h
FE1
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
1
2SC1383, 2SC1384
Transistor
PC — Ta
IC — VCE
1.2
IC — I B
1.5
1.2
1.25
0.8
0.6
0.4
0.2
8mA
1.0
7mA
6mA
0.75
5mA
4mA
3mA
0.5
2mA
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
3
3
25˚C
75˚C
0.3
0.1
0.03
0.3
140
120
100
80
60
40
20
1
3
Emitter current IE (mA)
–100
8
10
12
500
400
300
Ta=75˚C
200
25˚C
–25˚C
100
0
0.01 0.03
10
0.1
0.3
1
3
10
Collector current IC (A)
VCER — RBE
120
IE=0
f=1MHz
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–30
6
VCE=10V
Cob — VCB
Collector output capacitance Cob (pF)
Transition frequency fT (MHz)
Ta=–25˚C
1
0.1
4
600
50
–10
2
Base current IB (mA)
Collector current IC (A)
VCB=10V
Ta=25˚C
–3
0
hFE — IC
10
0.01
0.01 0.03
10
160
0
–1
10
30
fT — IE
180
8
IC/IB=10
Collector current IC (A)
200
6
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
3
0.1
4
VBE(sat) — IC
IC/IB=10
0.3
0.4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
0.6
0
0
Forward current transfer ratio hFE
40
1
3
10
30
100
Collector to base voltage VCB (V)
Collector to emitter voltage VCER (V)
20
0.8
0.2
1mA
0
0
2
1.0
IB=10mA