Small Signal Zener Diodes
Small Signal Zener Diodes
FEATURES- Silicon planar power Zener diodes
- Standard Zener voltage tolerance is ± 5 % with a “B” suffix in the ordering code (e.g.: 1N5221B), suffix “C” is ± 2 % tolerance
- These diodes are also available in MiniMELF case with the type designation TZM5221 to TZM5267, SOT-23 case with the type designations MMBZ5225 to MMBZ5267 and SOD-123 case with the types designations MMSZ5225 to MMSZ5267
- AEC-Q101 qualified PRIMARY CHARACTERISTICS
- Material categorization: for definitions of compliance
PARAMETER
VALUE UNIT
please see www.vishay.com/doc?99912
V range nom. 2.4 to 75
V Z
APPLICATIONS
Test current I 1.7 to 20 mA
ZT
- Voltage stabilization
V specification Thermal equilibrium
Z
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TR 10 000 per 13" reel
1N5221C to 1N5267C
1N5221C to 1N5267C-series-TR 30 000/box
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TAP 10 000 per ammopack (52 mm tape)
1N5221C to 1N5267C
1N5221C to 1N5267C-series-TAP
PACKAGE
MOLDING COMPOUND MOISTURE SENSITIVITY SOLDERING PACKAGE NAME WEIGHT FLAMMABILITY RATING LEVEL CONDITIONS MSL level 1
DO-35 125 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified)
amb PARAMETER TEST CONDITION SYMBOL
VALUE UNIT Power dissipation T 25 °C P 500 mW
L tot
Zener current
I Z P tot /V Z mA Thermal resistance junction to ambient air I = 4 mm, T = constant R 300 K/W
L thJA
T Junction temperature
j 175 °C
Storage temperature range T -65 to +175 °C
stg
Forward voltage (max.) I = 200 mA
V
1.1 V
F F
1 Rev. 2.1, 08-Sep-14 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ELECTRICAL CHARACTERISTICS (T
1N5250
1N5251
15 25 600 0.086
0.1
0.25
6.2
20
14 23 600 0.086
5.6
0.1
0.25
6.6
19
1N5249
14 21 600 0.085
0.1
22
0.25
7
25
27
1N5254
19 35 600 0.089
0.1
0.25
5
1N5253
0.1
18 33 600 0.088
0.1
0.25
5.2
24
1N5252
17 29 600 0.087
0.25
18
0.25
0.5
0.1
0.25
9
14
1N5244
9.9 13 600 0.079
0.25
1N5245
9.5
13
1N5243
9.1 30 600 0.077
1
0.25
20
10 15 600 0.082
15
1N5248
12 17 600 0.083
13 19 600 0.084
0.1
0.25
7.4
17
1N5247
0.1
8.5
0.25
7.8
16
1N5246
11 16 600 0.082
0.1
0.25
4.6
0.1
1N5242
0.1 39 125 1100 0.096
1N5264
0.1 43 150 1300 0.096
0.25
2.2
56
1N5263
0.25
2.1
2.5
51
1N5262
0.1 36 105 1000 0.095
0.25
2.7
47
60
0.25
33 93 900 0.095
0.25
0.1 56 270 1700 0.098
0.25
1.7
75
1N5267
0.1 52 230 1600 0.097
1.8
0.1 46 170 1400 0.097
68
1N5266
0.1 47 185 1400 0.097
0.25
2
62
1N5265
1N5261
0.1
21 41 600
30
33
1N5257
23 49 600 0.091
0.1
0.25
4.2
1N5256
0.25
21 44 600 0.091
0.1
0.25
4.5
28
1N5255
0.09
3.8
0.1
0.25
3.2
3
43
1N5260
30 80 800 0.094
0.1
0.25
39
25 58 700 0.092
1N5259
27 70 700 0.093
0.1
0.25
3.4
36
1N5258
12
Rev. 2.1, 08-Sep-14
2 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
1N5225
1N5226
1 29 1600 - 0.075
50
0.25
20
3
1 30 1400 - 0.08
20
75
0.25
20
2.8
1N5224
1 30 1300 - 0.08
75
3.3
0.25
20
3.9
4.3
1N5229
1 23 1900 - 0.06
10
0.25
20
1N5228
25
1 24 1700 - 0.065
15
0.25
20
3.6
1N5227
1 28 1600 - 0.07
0.25
2.7
0.25
TEMPERATURE COEFFICIENT
R
I R at V
I ZT2
I ZT1
ZT1
V Z at I
TEST CURRENT REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz
Z
(1)
PART NUMBER ZENER VOLTAGE RANGE
= 25 °C, unless otherwise specified)
amb
Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
(1)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT Note
Z
at I
1N5223
2.4
1 30 1250 - 0.085
20 0.25 100
2.5
1N5222
1 30 1200 - 0.085
20 0.25 100
1N5221
ZT1 (1)
V mA µA V %/K NOM. MAX. MAX. MAX. TYP.
VZ
ZT2
at I
ZK
Z
20
5
2
20
20
8.7
1N5238
6.5 8 500 0.062
3
0.25
8.2
3
1N5237
6 6 500 0.058
3
0.25
20
7.5
1N5236
0.25
6.5 8 600 0.065
5 5 750
0.25
0.25
20
11
1N5241
8 17 600 0.075
3
20
1N5239
10
1N5240
7 10 600 0.068
3
0.25
20
9.1
0.05
3
1 22 2000 0.055
5.1
1N5232
0.03
2 17 1600
5
0.25
20
1N5231
20
0.03
2 19 1900
5
0.25
20
4.7
1N5230
5.6
0.25
0.25
6.2
20
6.8
1N5235
4 7 1000 0.045
5
0.25
20
1N5234
5
3.5 7 1600 0.038
5
0.25
20
6
1N5233
3 11 1600 0.038
8.4 22 600 0.076
BASIC CHARACTERISTICS (T
- Total Po w er Dissipation (m W )
- Ther m. Resist. J unction Am bient (K/ W )
P tot
I Z = 5 mA
15
20
1
10 100 1000
V Z
V )
V Z
25 95 9598
I Z = 5 mA
5
I - Lead Length (mm) T L = constant
95 9600
15 V Z
10
5
40
80
200
T amb - Ambient Temperature (°C) 200 95 9602
10
20 l l R thJ A
300 400 500 600
15 100 200 300 400 500
10
5
95 9611
V Z (10 /K)
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Thermal Resistance vs. Lead Length Fig. 2 - Typical Change of Working Voltage under Operating
- Temperat ure Coefficient of
- 5
- V oltage Change (m
amb
= 25 °C Fig. 3 - Typical Change of Working Voltage vs.
10
- Z-Voltage (V)
- Z-Voltage (V)
Fig. 5 - Temperature Coefficient of V
20
30
40
Z
50 TK V Z
vs. Z-Voltage Fig. 6 - Diode Capacitance vs. Z-Voltage
Conditions at T
1.3 V
/K
- 60 60 120 180
- Junction Temperature (°C)
- Z-Voltage (V)
Rev. 2.1, 08-Sep-14
5
V R = 2 V
= 25 °C
- 2 x 10 -4
- 4 x 10 -4
- Diode Capacitance (pF)
20 T j
25 95 9601
V Z
C D
50 100 150 200
- Relative Voltage Change
15
10
3 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
/K
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Junction Temperature Fig. 4 - Total Power Dissipation vs. Ambient Temperature
0.8
0.9
1.0
1.2
Ztn
T j
240 95 9599
V Ztn = V Zt
/V Z
(25 °C) TK VZ = 10 x 10 -4 /K 8 x 10
- -4 /K 2 x 10 -4
/K 6 x 10
- -4 /K 4 x 10 -4
/K 120 160 100
1.1
50 100 P = 500 mW tot
10
40 T = 25 °C amb
T = 25 °C j
1
30 urrent (mA) urrent (mA) ard C
0.1
20 w
- Z-C
Z
I
- For
0.01
10 F
I 0.001
1.0
0.2
0.4
0.6
0.8
35
15
20
25
30 V
V 959605
95 9607
- Forward Voltage (V) - Z-Voltage (V)
F Z
Fig. 7 - Forward Current vs. Forward Voltage Fig. 9 - Z-Current vs. Z-Voltage
100 1000
) Ω
80 I = 1 mA
Z P = 500 mW tot
T = 25 °C 100 amb
60 urrent (mA)
40 10 mA
10
- Z-C
Z
I
20
- Differential Z-Resistance (
Z r T = 25 °C j
1
25
4
6
8
12
20
5
10
15
20 V
V 95 9604 - Z-Voltage (V) 95 9606
- Z-Voltage (V)
Z Z
Fig. 8 - Z-Current vs. Z-Voltage Fig. 10 - Differential Z-Resistance vs. Z-Voltage
) W 1000 t /T = 0.5 p ulse Cond. (K/ 100 t /T = 0.2 p
Single Pulse R = 300 K/W thJA
T = T - T j max. amb
10 t /T = 0.01 p t /T = 0.1 t /T = 0.02 p p t /T = 0.05
2 1/2 p i = (- V + (V + 4r x T/Z ) )/(2r )
ZM Z Z zj thp zj
1 -1 1 2
- Thermal Resistance for P
10
10
10
10 thp
Z 95 9603
t - Pulse Length (ms)
pFig. 11 - Thermal Response
4 Rev. 2.1, 08-Sep-14 Document Number: 85588
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT Rev. 2.1, 08-Sep-14
5 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx 94 12648 Rev. 1 - Date: 19. December 2011 Document no.: S8-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identification1.
7 [ .0
6
7 ] 1 .5 [
0. 059]
3.1 min. [0.120]
Ø 0.55 m a x.
[ .022] Ø 0. 4 m in. [ .015]
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1 Revision: 08-Feb-17 Document Number: 91000