Small Signal Zener Diodes

  

Small Signal Zener Diodes

FEATURES

  • Silicon planar power Zener diodes
  • Standard Zener voltage tolerance is ± 5 % with a “B” suffix in the ordering code (e.g.: 1N5221B), suffix “C” is ± 2 % tolerance
  • These diodes are also available in MiniMELF case with the type designation TZM5221 to TZM5267, SOT-23 case with the type designations MMBZ5225 to MMBZ5267 and SOD-123 case with the types designations MMSZ5225 to MMSZ5267
  • AEC-Q101 qualified PRIMARY CHARACTERISTICS
  • Material categorization: for definitions of compliance

  PARAMETER

  VALUE UNIT

  please see www.vishay.com/doc?99912

  V range nom. 2.4 to 75

  V Z

  APPLICATIONS

  Test current I 1.7 to 20 mA

  ZT

  • Voltage stabilization

  V specification Thermal equilibrium

  Z

  Int. construction Single

ORDERING INFORMATION

  DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

  1N5221B to 1N5267B

  1N5221B to 1N5267B-series-TR 10 000 per 13" reel

  1N5221C to 1N5267C

  1N5221C to 1N5267C-series-TR 30 000/box

  1N5221B to 1N5267B

  1N5221B to 1N5267B-series-TAP 10 000 per ammopack (52 mm tape)

  1N5221C to 1N5267C

  1N5221C to 1N5267C-series-TAP

  PACKAGE

  MOLDING COMPOUND MOISTURE SENSITIVITY SOLDERING PACKAGE NAME WEIGHT FLAMMABILITY RATING LEVEL CONDITIONS MSL level 1

  DO-35 125 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020)

  ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified)

  amb PARAMETER TEST CONDITION SYMBOL

  VALUE UNIT Power dissipation T  25 °C P 500 mW

  L tot

  Zener current

  I Z P tot /V Z mA Thermal resistance junction to ambient air I = 4 mm, T = constant R 300 K/W

  L thJA

  T Junction temperature

  j 175 °C

  Storage temperature range T -65 to +175 °C

  stg

  Forward voltage (max.) I = 200 mA

  V

  1.1 V

  F F

  1 Rev. 2.1, 08-Sep-14 Document Number: 85588

  For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ELECTRICAL CHARACTERISTICS (T

  1N5250

  1N5251

  15 25 600 0.086

  0.1

  0.25

  6.2

  20

  14 23 600 0.086

  5.6

  0.1

  0.25

  6.6

  19

  1N5249

  14 21 600 0.085

  0.1

  22

  0.25

  7

  25

  27

  1N5254

  19 35 600 0.089

  0.1

  0.25

  5

  1N5253

  0.1

  18 33 600 0.088

  0.1

  0.25

  5.2

  24

  1N5252

  17 29 600 0.087

  0.25

  18

  0.25

  0.5

  0.1

  0.25

  9

  14

  1N5244

  9.9 13 600 0.079

  0.25

  1N5245

  9.5

  13

  1N5243

  9.1 30 600 0.077

  1

  0.25

  20

  10 15 600 0.082

  15

  1N5248

  12 17 600 0.083

  13 19 600 0.084

  0.1

  0.25

  7.4

  17

  1N5247

  0.1

  8.5

  0.25

  7.8

  16

  1N5246

  11 16 600 0.082

  0.1

  0.25

  4.6

  0.1

  1N5242

  0.1 39 125 1100 0.096

  1N5264

  0.1 43 150 1300 0.096

  0.25

  2.2

  56

  1N5263

  0.25

  2.1

  2.5

  51

  1N5262

  0.1 36 105 1000 0.095

  0.25

  2.7

  47

  60

  0.25

  33 93 900 0.095

  0.25

  0.1 56 270 1700 0.098

  0.25

  1.7

  75

  1N5267

  0.1 52 230 1600 0.097

  1.8

  0.1 46 170 1400 0.097

  68

  1N5266

  0.1 47 185 1400 0.097

  0.25

  2

  62

  1N5265

  1N5261

  0.1

  21 41 600

  30

  33

  1N5257

  23 49 600 0.091

  0.1

  0.25

  4.2

  1N5256

  0.25

  21 44 600 0.091

  0.1

  0.25

  4.5

  28

  1N5255

  0.09

  3.8

  0.1

  0.25

  3.2

  3

  43

  1N5260

  30 80 800 0.094

  0.1

  0.25

  39

  25 58 700 0.092

  1N5259

  27 70 700 0.093

  0.1

  0.25

  3.4

  36

  1N5258

  12

  Rev. 2.1, 08-Sep-14

  2 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com

  1N5225

  1N5226

  1 29 1600 - 0.075

  50

  0.25

  20

  3

  1 30 1400 - 0.08

  20

  75

  0.25

  20

  2.8

  1N5224

  1 30 1300 - 0.08

  75

  3.3

  0.25

  20

  3.9

  4.3

  1N5229

  1 23 1900 - 0.06

  10

  0.25

  20

  1N5228

  25

  1 24 1700 - 0.065

  15

  0.25

  20

  3.6

  1N5227

  1 28 1600 - 0.07

  0.25

  2.7

  0.25

  TEMPERATURE COEFFICIENT

  R

  I R at V

  I ZT2

  I ZT1

  ZT1

  V Z at I

  TEST CURRENT REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz

  Z

  (1)

  PART NUMBER ZENER VOLTAGE RANGE

  = 25 °C, unless otherwise specified)

  amb

  Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W

  (1)

  THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT Note

  Z

  at I

  1N5223

  2.4

  1 30 1250 - 0.085

  20 0.25 100

  2.5

  1N5222

  1 30 1200 - 0.085

  20 0.25 100

  1N5221

  ZT1 (1)

  V mA µA V  %/K NOM. MAX. MAX. MAX. TYP.

  VZ

  

  ZT2

  at I

  ZK

  Z

  20

  5

  2

  20

  20

  8.7

  1N5238

  6.5 8 500 0.062

  3

  0.25

  8.2

  3

  1N5237

  6 6 500 0.058

  3

  0.25

  20

  7.5

  1N5236

  0.25

  6.5 8 600 0.065

  5 5 750

  0.25

  0.25

  20

  11

  1N5241

  8 17 600 0.075

  3

  20

  1N5239

  10

  1N5240

  7 10 600 0.068

  3

  0.25

  20

  9.1

  0.05

  3

  1 22 2000 0.055

  5.1

  1N5232

  0.03

  2 17 1600

  5

  0.25

  20

  1N5231

  20

  0.03

  2 19 1900

  5

  0.25

  20

  4.7

  1N5230

  5.6

  0.25

  0.25

  6.2

  20

  6.8

  1N5235

  4 7 1000 0.045

  5

  0.25

  20

  1N5234

  5

  3.5 7 1600 0.038

  5

  0.25

  20

  6

  1N5233

  3 11 1600 0.038

  8.4 22 600 0.076

BASIC CHARACTERISTICS (T

  • Total Po w er Dissipation (m W )
  • Ther m. Resist. J unction Am bient (K/ W )

  P tot

  I Z = 5 mA

  15

  20

  1

  10 100 1000

  V Z

  V )

  V Z

  25 95 9598

  I Z = 5 mA

  5

  I - Lead Length (mm) T L = constant

  95 9600

  15 V Z

  10

  5

  40

  80

  200

  T amb - Ambient Temperature (°C) 200 95 9602

  10

  20 l l R thJ A

  300 400 500 600

  15 100 200 300 400 500

  10

  5

  95 9611

  V Z (10 /K)

  amb

  = 25 °C, unless otherwise specified)

  Fig. 1 - Thermal Resistance vs. Lead Length Fig. 2 - Typical Change of Working Voltage under Operating

  • Temperat ure Coefficient of
  • 5

  • V oltage Change (m

  amb

  = 25 °C Fig. 3 - Typical Change of Working Voltage vs.

  10

  • Z-Voltage (V)
  • Z-Voltage (V)

  Fig. 5 - Temperature Coefficient of V

  20

  30

  40

  Z

  50 TK V Z

  vs. Z-Voltage Fig. 6 - Diode Capacitance vs. Z-Voltage

  Conditions at T

1.3 V

  /K

  • 60 60 120 180
  • Junction Temperature (°C)
  • Z-Voltage (V)

  Rev. 2.1, 08-Sep-14

  5

  V R = 2 V

  = 25 °C

  • 2 x 10 -4
  • 4 x 10 -4
  • Diode Capacitance (pF)

  20 T j

  25 95 9601

  V Z

  C D

  50 100 150 200

  • Relative Voltage Change

  15

  10

  3 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com

  /K

  THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

  Junction Temperature Fig. 4 - Total Power Dissipation vs. Ambient Temperature

  0.8

  0.9

  1.0

  1.2

  Ztn

  T j

  240 95 9599

  V Ztn = V Zt

  /V Z

  (25 °C) TK VZ = 10 x 10 -4 /K 8 x 10

  • -4 /K 2 x 10 -4

  /K 6 x 10

  • -4 /K 4 x 10 -4

  /K 120 160 100

  1.1

  50 100 P = 500 mW tot

  10

  40 T = 25 °C amb

  T = 25 °C j

  1

  30 urrent (mA) urrent (mA) ard C

  0.1

  20 w

  • Z-C

  Z

  I

  • For

  0.01

  10 F

  I 0.001

  1.0

  0.2

  0.4

  0.6

  0.8

  35

  15

  20

  25

  30 V

  V 959605

  95 9607

  • Forward Voltage (V) - Z-Voltage (V)

  F Z

  Fig. 7 - Forward Current vs. Forward Voltage Fig. 9 - Z-Current vs. Z-Voltage

  100 1000

  ) Ω

80 I = 1 mA

  Z P = 500 mW tot

  T = 25 °C 100 amb

  60 urrent (mA)

  40 10 mA

  10

  • Z-C

  Z

  I

  20

  • Differential Z-Resistance (

  Z r T = 25 °C j

  1

  25

  4

  6

  8

  12

  20

  5

  10

  15

  20 V

  V 95 9604 - Z-Voltage (V) 95 9606

  • Z-Voltage (V)

  Z Z

  Fig. 8 - Z-Current vs. Z-Voltage Fig. 10 - Differential Z-Resistance vs. Z-Voltage

  ) W 1000 t /T = 0.5 p ulse Cond. (K/ 100 t /T = 0.2 p

  Single Pulse R = 300 K/W thJA

  T = T - T j max. amb

  10 t /T = 0.01 p t /T = 0.1 t /T = 0.02 p p t /T = 0.05

  2 1/2 p i = (- V + (V + 4r x T/Z ) )/(2r )

  ZM Z Z zj thp zj

  1 -1 1 2

  • Thermal Resistance for P

  10

  10

  10

  10 thp

  Z 95 9603

t - Pulse Length (ms)

p

  Fig. 11 - Thermal Response

  4 Rev. 2.1, 08-Sep-14 Document Number: 85588

  For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT Rev. 2.1, 08-Sep-14

  5 Document Number: 85588 For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com

  THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

  PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx 94 12648 Rev. 1 - Date: 19. December 2011 Document no.: S8-V-3906.04-031(4)

  

26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]

Cathode Identification

  1.

  7 [ .0

  6

  7 ] 1 .5 [

  0. 059]

  

3.1 min. [0.120]

Ø 0.

  55 m a x.

  [ .022] Ø 0. 4 m in. [ .015]

  

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  1 Revision: 08-Feb-17 Document Number: 91000