THE STRUCTURE AND CHEMICAL COMPOSITION OF THE SEMICONDUCTOR MATTER SnS THIN FILM PREPARATION PRODUCT WITH EVAPORATION VACCUM TECHNIQUE TO SOLAR CELL APPLICATION.
THE STRUCTURE AND CHEMICAL COMPOSITION OF THE
SEMICONDUCTOR MATTER SnS THIN FILM PREPARATION
PRODUCT WITH EVAPORATION VACCUM TECHNIQUE TO SOLAR
CELL APPLICATION
by:
Ibrahim Aziz
09306141027
ABSTRACT
The purpose of the research was to understand the crystal structures,
surface morphology, and chemical composition of SnS thin film by using
evaporation technique.
The SnS thin film was preparated by evaporation technique, while
physical properties was determined using X-ray Diffraction (XRD), Scanning
Electron Microscope (SEM), and Energy Dispersive Analysis X-Ray (EDAX).
The SnS thin film had orthrombik crystal structure with lattice parameters,
a = 4,30 Å, b = 11,09 Å, and c = 4,06 Å for the first sample, a = 4,31 Å,
b = 11,08 Å, and c = 4,16 Å for the second sample, and a = 4,01 Å, b = 11,08 Å,
and c = 4,15 Å for the third sample. The result of Scanning Electron Microscope
(SEM) analysis showed the surface of Tin Sulfide crystal where the size of the
grain was 0,5 μm. The result of Energy Dispersive Analysis X-Ray (EDAX)
analysis showed that the chemical composition were Sn : 38,95 % and S : 13,78%.
Key words: thin film, Tin Sulfide (SnS), Evaporation technique.
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STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR SnS
LAPISAN TIPIS HASIL PREPARASI DENGAN TEKNIK VAKUM
EVAPORASI UNTUK APLIKASI SEL SURYA
Oleh:
Ibrahim Aziz
09306141027
ABSTRAK
Penelitian ini bertujuan untuk mengetahui struktur kristal, morfologi
permukaan, dan komposisi kimia lapisan tipis Timah Sulfida (SnS) dengan teknik
Evaporasi.
Lapisan tipis SnS dipreparasi dengan teknik Evaporasi, sedangkan untuk
mengetahui sifat fisik dilakukan karakterisasi menggunakan X-ray Diffraction
(XRD), Scanning Electron Microscope (SEM), dan Energy Dispersive Analysis
X-Ray (EDAX).
Lapisan tipis SnS yang terbentuk memiliki struktur kristal orthorombik
dengan parameter kisi, yaitu a = 4,30 Å, b = 11,09 Å, dan c = 4,06 Å untuk
sampel pertama, a = 4,31 Å, b = 11,08 Å, dan c = 4,16 Å pada sampel kedua, dan
a = 4,01 Å, b = 11,08 Å, dan c = 4,15 Å pada sampel ketiga. Hasil analisis
Scanning Electron Microscope (SEM) menunjukkan bahwa struktur dan tekstur
permukaan kristal SnS yang terbentuk dengan ukuran butiran (grain) yaitu
diperkirakan berukuran 0,5 μm. Hasil analisis Energy Dispersive Analysis X-Ray
(EDAX) menunjukkan komposisi kimia sampel, yaitu unsur Sn = 38,95% dan
S =13,78 %.
Kata kunci: lapisan tipis, Timah Sulfida (SnS), teknik Evaporasi.
vii
SEMICONDUCTOR MATTER SnS THIN FILM PREPARATION
PRODUCT WITH EVAPORATION VACCUM TECHNIQUE TO SOLAR
CELL APPLICATION
by:
Ibrahim Aziz
09306141027
ABSTRACT
The purpose of the research was to understand the crystal structures,
surface morphology, and chemical composition of SnS thin film by using
evaporation technique.
The SnS thin film was preparated by evaporation technique, while
physical properties was determined using X-ray Diffraction (XRD), Scanning
Electron Microscope (SEM), and Energy Dispersive Analysis X-Ray (EDAX).
The SnS thin film had orthrombik crystal structure with lattice parameters,
a = 4,30 Å, b = 11,09 Å, and c = 4,06 Å for the first sample, a = 4,31 Å,
b = 11,08 Å, and c = 4,16 Å for the second sample, and a = 4,01 Å, b = 11,08 Å,
and c = 4,15 Å for the third sample. The result of Scanning Electron Microscope
(SEM) analysis showed the surface of Tin Sulfide crystal where the size of the
grain was 0,5 μm. The result of Energy Dispersive Analysis X-Ray (EDAX)
analysis showed that the chemical composition were Sn : 38,95 % and S : 13,78%.
Key words: thin film, Tin Sulfide (SnS), Evaporation technique.
viii
STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR SnS
LAPISAN TIPIS HASIL PREPARASI DENGAN TEKNIK VAKUM
EVAPORASI UNTUK APLIKASI SEL SURYA
Oleh:
Ibrahim Aziz
09306141027
ABSTRAK
Penelitian ini bertujuan untuk mengetahui struktur kristal, morfologi
permukaan, dan komposisi kimia lapisan tipis Timah Sulfida (SnS) dengan teknik
Evaporasi.
Lapisan tipis SnS dipreparasi dengan teknik Evaporasi, sedangkan untuk
mengetahui sifat fisik dilakukan karakterisasi menggunakan X-ray Diffraction
(XRD), Scanning Electron Microscope (SEM), dan Energy Dispersive Analysis
X-Ray (EDAX).
Lapisan tipis SnS yang terbentuk memiliki struktur kristal orthorombik
dengan parameter kisi, yaitu a = 4,30 Å, b = 11,09 Å, dan c = 4,06 Å untuk
sampel pertama, a = 4,31 Å, b = 11,08 Å, dan c = 4,16 Å pada sampel kedua, dan
a = 4,01 Å, b = 11,08 Å, dan c = 4,15 Å pada sampel ketiga. Hasil analisis
Scanning Electron Microscope (SEM) menunjukkan bahwa struktur dan tekstur
permukaan kristal SnS yang terbentuk dengan ukuran butiran (grain) yaitu
diperkirakan berukuran 0,5 μm. Hasil analisis Energy Dispersive Analysis X-Ray
(EDAX) menunjukkan komposisi kimia sampel, yaitu unsur Sn = 38,95% dan
S =13,78 %.
Kata kunci: lapisan tipis, Timah Sulfida (SnS), teknik Evaporasi.
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