STRUCTURE AND CHEMICAL COMPOSITION SEMICONDUCTOR MATERIALS Sn(Se0,4 S0,6) THIN LAYER PREPARATION OF TECHNIQUE VACUUM EVAPORATION APPLICATION FOR SE SOLAR.
STRUCTURE AND CHEMICAL COMPOSITION SEMICONDUCTOR
MATERIALS Sn(Se0,4 S0,6) THIN LAYER PREPARATION OF TECHNIQUE
VACUUM EVAPORATION APPLICATION FOR SE SOLAR
by :
Linda Armitasari
10306144043
ABSTRACT
This research aims to determine the crystal structure of the thin layer of
Sn(Se0,4 S0,6), the chemical composition and the morphological structure of a thin
layer of Sn Sn(Se0,4 S0,6), and determine the effect of distance spacer on the quality of
the thin layer of Sn Sn(Se0,4 S0,6),
The Sn(Se0,4 S0,6) thin layer preparation using the vacuum evaporation
technique, with the evaporation parameter at spacer 15 cm and 10 cm, vacuum
pressure of 4x105 mbar and deposition time is 8 minute. The characterization in
research using XRD (X-Ray Diffraction) to determine the crystal structure, the SEM
(Scanning Electron Microscopy) determine the structure of a thin layer morphology,
and chemical composition of the semiconductor material identified by using EDAX
(Energy Dispersive X-Ray Analysis).
XRD characterization results of the two samples have a crystalline structure
orthorombik b !"#$ %"%&%'%&%!(%)* %+ $#,-./0%,"--.! %1"+"2 - +$%"+ %$"21, %3%4$1"! +%
distance = 15 cm) a = 4.1186 Å; b = 11.4830 Å; c = 4.3192 Å and sample 2 (spacer
distance = 10 cm) a = 4.4149 Å; b = 11.4686 Å; c = 4.0971 Å. Furthermore, the SEM
results showed the grains as a sign that the crystals of Sn(Se0,4 S0,6), has been formed.
Grain is spread by certain patterns periodically. EDAX results, showing a comparison
of the chemical composition of the semiconductor material Sn(Se0,4 S0,6), in atoms
(%) is: Sn = 49.99; Se = 23.65; and S = 26.36%, or a ratio of Sn: Se: S = 1:0.47:0.53.
Key word : semiconductor Sn(Se0,4 S0,6), characterization of materials,
method of evaporation.
viii
STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR
Sn(Se0,4 S0,6) LAPISAN TIPIS HASIL PREPARASI TEKNIK VAKUM
EVAPORASI UNTUK APLIKASI SE SURYA
Oleh :
Linda Armitasari
10306144043
ABSTRAK
Penelitian ini bertujuan untuk mengetahui struktur kristal lapisan tipis Sn(Se0,4
S0,6), komposisi kimia dan morfologi permukaan lapisan tipis Sn(Se0,4 S0,6), dan
mengetahui pengaruh jarak spacer terhadap kualitas lapisan tipis Sn(Se0,4 S0,6).
Preparasi lapisan tipis Sn(Se0,4 S0,6) menggunakan metode vakum evaporasi,
dengan parameter evaporasi pada jarak spacer 15 cm dan 10 cm, tekanan vakum
4x105 mbar, dan waktu deposisi 8 menit. Adapun karakterisasi dalam penelitian
menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal, SEM
(Scanning Elektron Microscopy) mengetahui struktur morfologi lapisan tipis, dan
komposisi kimia bahan semikonduktor diketahui dengan menggunakan EDAX
(Energy Dispersive Analysis X-Ray).
Hasil karakterisasi XRD dari kedua sampel memiliki struktur kristal
orthorombik karena
vii
MATERIALS Sn(Se0,4 S0,6) THIN LAYER PREPARATION OF TECHNIQUE
VACUUM EVAPORATION APPLICATION FOR SE SOLAR
by :
Linda Armitasari
10306144043
ABSTRACT
This research aims to determine the crystal structure of the thin layer of
Sn(Se0,4 S0,6), the chemical composition and the morphological structure of a thin
layer of Sn Sn(Se0,4 S0,6), and determine the effect of distance spacer on the quality of
the thin layer of Sn Sn(Se0,4 S0,6),
The Sn(Se0,4 S0,6) thin layer preparation using the vacuum evaporation
technique, with the evaporation parameter at spacer 15 cm and 10 cm, vacuum
pressure of 4x105 mbar and deposition time is 8 minute. The characterization in
research using XRD (X-Ray Diffraction) to determine the crystal structure, the SEM
(Scanning Electron Microscopy) determine the structure of a thin layer morphology,
and chemical composition of the semiconductor material identified by using EDAX
(Energy Dispersive X-Ray Analysis).
XRD characterization results of the two samples have a crystalline structure
orthorombik b !"#$ %"%&%'%&%!(%)* %+ $#,-./0%,"--.! %1"+"2 - +$%"+ %$"21, %3%4$1"! +%
distance = 15 cm) a = 4.1186 Å; b = 11.4830 Å; c = 4.3192 Å and sample 2 (spacer
distance = 10 cm) a = 4.4149 Å; b = 11.4686 Å; c = 4.0971 Å. Furthermore, the SEM
results showed the grains as a sign that the crystals of Sn(Se0,4 S0,6), has been formed.
Grain is spread by certain patterns periodically. EDAX results, showing a comparison
of the chemical composition of the semiconductor material Sn(Se0,4 S0,6), in atoms
(%) is: Sn = 49.99; Se = 23.65; and S = 26.36%, or a ratio of Sn: Se: S = 1:0.47:0.53.
Key word : semiconductor Sn(Se0,4 S0,6), characterization of materials,
method of evaporation.
viii
STRUKTUR DAN KOMPOSISI KIMIA BAHAN SEMIKONDUKTOR
Sn(Se0,4 S0,6) LAPISAN TIPIS HASIL PREPARASI TEKNIK VAKUM
EVAPORASI UNTUK APLIKASI SE SURYA
Oleh :
Linda Armitasari
10306144043
ABSTRAK
Penelitian ini bertujuan untuk mengetahui struktur kristal lapisan tipis Sn(Se0,4
S0,6), komposisi kimia dan morfologi permukaan lapisan tipis Sn(Se0,4 S0,6), dan
mengetahui pengaruh jarak spacer terhadap kualitas lapisan tipis Sn(Se0,4 S0,6).
Preparasi lapisan tipis Sn(Se0,4 S0,6) menggunakan metode vakum evaporasi,
dengan parameter evaporasi pada jarak spacer 15 cm dan 10 cm, tekanan vakum
4x105 mbar, dan waktu deposisi 8 menit. Adapun karakterisasi dalam penelitian
menggunakan XRD (X-Ray Diffraction) untuk mengetahui struktur kristal, SEM
(Scanning Elektron Microscopy) mengetahui struktur morfologi lapisan tipis, dan
komposisi kimia bahan semikonduktor diketahui dengan menggunakan EDAX
(Energy Dispersive Analysis X-Ray).
Hasil karakterisasi XRD dari kedua sampel memiliki struktur kristal
orthorombik karena
vii