I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
13
60X Transistor Cost Drop from 350nm to
90nm Node
Source: Intel ‘03
60X Transistor Cost Drop from 350nm to 60X Transistor Cost Drop from 350nm to
90nm Node 90nm Node
Source: Intel Source: Intel
‘ ‘
03 03
CostTransistor Normalized to 130nm Node CostTransistor Normalized to 130nm Node
CostTransistor Normalized to 130nm Node
2003 2001
1999 1997
1995 0.1
1.0 10.0
100.0
350nm 250nm
180nm 130nm
90nm
Technology NodeIntroduction Year N
o rmalized Cos
tTransistor
Cost per Total Trans 25 SavingsYear
35 SavingsYear 40 SavingsYear
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
14
The Era of
Geometrical Scaling
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
15
With respect to the factor contributed by Device and Circuit Cleverness, however, the situation is different.
We are approaching a limit that must slow the rate of progress I see no reason to expect the rate of progress
In the use of smaller dimensions in complex Circuits to decrease in the near future.
Gordon Moore, IEDM
1975
The new slope might approximate a doubling Every two years…….
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
16
Moore Moore
’ ’
s Law and Scaling Laws s Law and Scaling Laws
Convergence Convergence
50 AREA READUCION GENERATION TO GENERATION
50
= 30 LINEAR FEATURE REDUCTION
0.5 = 0.7
Year 0=1X Year 1
Year 2=2X
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
17
Worldwide Transistor Production
1000000 10000000
1E+08 1E+09
1E+10 1E+11
1E+12 1E+13
1E+14 1E+15
1E+16 1E+17
1E+18
1955 1957
1959 1961
1963 1965
1967 1969
1971 1973
1975 1977
1979 1981
1983 1985
1987 1989
1991 1993
1995 1997
1999 2001
Units
RESTRICTED DATA: for access and use only within your company, as per your companys agreement with VLSI Research Inc. Copyright © 2003 by VLSI Research Inc.
Theres no slowing of Moores Law here
[ Transistors ]
Source: VLSI Research
~55 CAGR
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
18
Average Transistor Price by Year Average Transistor Price by Year
Nearly 7 Orders Of Magnitude Reduction in PriceTransistor Nearly 7 Orders Of Magnitude Reduction in PriceTransistor
0.0000001 0.000001
0.00001 0.0001
0.001 0.01
0.1 1
10
68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 00 02
100 Nanodollars per transistor
Source: WSTSDataquestIntel, 304 Source: WSTSDataquestIntel, 304
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
19
Transistor Trade-offs
F
Max
= I
DSat
V
DD
C
ox
I
DSat
~1
µ
C
ox
WV
DD
–V
T 2
2 Lg
Power= V
DD 2
C
ox
F
Max
S D
G
Lg W
Increase Cox =Reduce t
ox
Reduce Lg
Reduce V
DD
ε
o
ε
s
t
ox
t
ox
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
20
Gate Oxide Scaling Gate Oxide Scaling
1 10
1990 1995
2000 2005
Gate Oxide Thickness
nm
1 10
1.2 nm
90nm .13um
.18um .25um
.35um
Generation
I
DSat
1
µ
V
DD
–V
T 2
2 Lg
W
ε
o
ε
s
1
t
ox
~
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
21
Transistor Performance Transistor Performance
0.0 0.2
0.4 0.6
0.8 1.0
1.2 1.4
1990 1995
2000 2005
Drive Current
mAum
1 10
Supply Voltage
V
NMOS
PMOS 1.2V
90nm .13um
.18um .25um
.35um Generation
I
DSat
1
µ
V
DD
–V
T 2
2 Lg
W
ε
o
ε
s
1
t
ox
~
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
22
Gate Delay Trend
100nm
F
Max
= I
DSat
V
DD
C
ox
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
23
0.35 0.35
Μ Μ
Gate Gate
Salicide Salicide
Spacer Spacer
Salicide Salicide
The Incredible Shrinking The Incredible Shrinking
Silicon Technology in the 90s Silicon Technology in the 90s
µ µ
0.25 0.25
Salicide Gate
Gate Spacer
Spacer Salicide
0.18 0.18
µ µ
Gate Gate
Spacer Spacer
Salicide
Salicide
1995
1997 1999
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
24
Process Name Px60
P1262 P1264
P1266 P1268
Lithography 130nm 90nm
65nm 45nm
32nm
Gate Length 70nm
50nm 35nm
25nm 18nm
Wafer mm 200300 300
300 300
300
1
st
Production 2001
2003 2005
2007 2009
Intels Logic Technology Intels Logic Technology
Evolution Continues Evolution Continues
Moores Law continues
Intel continues to introduce a new technology generation every 2 years
M.Bohr
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
25
50nm 50nm
100nm 100nm
Transistor for Transistor for
90nm 90nm
- -
node node
Gate oxide=1.2nm Gate oxide=1.2nm
Source: Intel Source: Intel
Influenza virus Influenza virus
Source: CDC Source: CDC
Nanotechnology Today
Example of today’s technology: 50 nm transistor dimension
Intel Intel 2003 Silicon Nanotech Product
Revenue 20B
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
26
50nm 50nm
But is this really
Nanotechnology
or more of the
same ?
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
27
CMOS Future Directions CMOS Future Directions
??2-3year
New Devices
2010-20XX 2X Performance2-3year
Integrated Solutions
2000-2014 702-3year
70 2-3year
Equivalent Scaling
2005-2014 1970-2004
Traditional Scaling
Features
Source: ITRS 7111998
From My Files
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
28
The Era of
Equivalent Scaling
And Much More
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
29
The Ideal MOS Transistor The Ideal MOS Transistor
Fully Surrounding Metal Electrode
High-K Gate Insulator
Fully Enclosed, Depleted
Semiconductor
Band Engineered Semiconductor
Low Resistance SourceDrain
Drain Source
Metal Gate Insulator
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
30
New Transistor Trade-off
I
DSat
~1
µ
C
ox
WV
DD
–V
T 2
2 Lg
S D
G
Lg W
Increase Cox
Reduce Lg
µ
Increase
µ
ε
o
κ
s
t
ox
New Material
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
31
R R
® ®
Gate Dielectric Scaling Gate Dielectric Scaling
1 2
3
Tox equivalent nm
4 8
12 Monolayers
4
1999
2001
2003
2005
1997 NTRS P.Gargini
From My Files
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
32
Gate Oxide Scaling Gate Oxide Scaling
1 10
1990 1995
2000 2005
Gate Oxide Thickness
nm
1 10
1.2 nm
Thinner gate oxide increases transistor performance Thinner gate oxide increases transistor performance
90nm .13um
.18um .25um
.35um
Generation
Silicon substrate 1.2nm SiO
2
Gate
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
33
The Next Step Towards Equivalent The Next Step Towards Equivalent
Scaling: High Scaling: High
- -
k Dielectric k Dielectric
Silicon substrate Gate
3.0nm High-k
Silicon substrate 1.2nm SiO
2
Gate
November 4
th
, 2003
High-k 1.6x
0.01x 90nm process
1.0x 1.0x
Capacitance: Leakage:
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
34
Gate Dielectric Scaling High Gate Dielectric Scaling High
- -
K K
1 10
1990 1995
2000 2005
Gate Dielectric Thickness
nm
1 10
1.2 nm
Thinner equivalent gate oxide increases transistor performance Thinner equivalent gate oxide increases transistor performance
90nm .13um
.18um .25um
.35um
Generation
2010
K= 3X
K
D
K= 5X
K
D
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
35
Equivalent Scaling
plus
Innovation
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
36
Transistor Strain Transistor Strain
Techniques Techniques
D G
S S
D G
Tensile Si
3
N
4
Cap
S D
G
Selective SiGe S-D Graded SiGe Layer
Biaxial Tensile Strain
Uniaxial Compressive Strain
for PMOS Uniaxial
Tensile Strain for NMOS
Traditional Approach Intels 90nm Technology
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
37
Strained Silicon Transistors Strained Silicon Transistors
Normal Silicon Lattice Strained Silicon Lattice
Current Flow
Normal electron
flow Faster
electron flow
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
38
Mobility Innovation Mobility Innovation
SiGe SiGe
Strained Strained
P P
- -
Channel Channel
Transistor Transistor
High Stress Film
Strained Strained
N N
- -
Channel Channel
Transistor Transistor
Source: Intel
I n t e l N a n ot e ch nology Vir t u a l Ope n H ou se
39
40 60
80 100
120 140
0.2 0.4
