Index of /intel-research/silicon
Si
Si
and Non
and Non
-
-
Si
Si
Nanotechnologies
Nanotechnologies
and their Benchmarking
and their Benchmarking
Robert Chau
Robert Chau
I ntel Fellow
I ntel Fellow
Director of Transistor Research and Nanotechnology
Director of Transistor Research and Nanotechnology
Technology & Manufacturing Group
Technology & Manufacturing Group
I ntel Corporation
I ntel Corporation
April 25, 2005
April 25, 2005
(2)
Content
Content
I ntroduction
Benchmarking metrics
Benchmarking methodology
Benchmarking results
(3)
Transistor Scaling
Transistor Scaling
Technology
Node
0.5µm0.35µm
0.25µm
0.18µm
0.13µm 90nm 65nm 45nm 30nm
Transistor
Physical Gate
Length
130nm 70nm 50nm 30nm 20nm 15nm1995
2005
1990
2000
2010
0.01
0.10
1.00
M
icromete
r
Nanotechnology
10
100
1000
Na
nome
te
r
Technology
Node
0.5µm0.35µm
0.25µm
0.18µm
0.13µm 90nm 65nm 45nm 30nm
Transistor
Physical Gate
Length
130nm 70nm 50nm 30nm 20nm 15nm1995
2005
1990
1995
2000
2005
2010
1990
2000
2010
0.01
0.10
1.00
M
icromete
r
0.01
0.10
1.00
M
icromete
r
Nanotechnology
10
100
1000
Na
nome
te
r
10
100
1000
Na
nome
te
r
Transistor physical gate length will reach ~ 15 nm before
end of this decade, and ~ 10 nm early next decade
(4)
Emerging Nanoelectronic Devices
Emerging Nanoelectronic Devices
5 n m 5 n m
2.0 nm High-K Gate
5.0 nm Si Nanowire
5 n m 5 n m
2.0 nm High-K Gate
5.0 nm Si Nanowire (e)
10nm
( a) 10nm LG Si MOSFET ( b) Non- planar Si Tri- gate ( c) I I I - V QWFET
( d) CNT FET
(5)
Benchmarking Metrics
Benchmarking Metrics
Benchmark emerging nanoelectronic devices
against state-of-the-art Si devices
Separate reality from hype
I dentify device strengths and shortcomings
Gauge research progress
4 key device metrics
CV/ I vs L
G-- I ntrinsic speed
Energy-Delay product vs L
G-- Switching energy
Subthreshold slope vs L
G-- Scalability
CV/ I vs I
ON/ I
OFF-- I
OFFvs speed tradeoff
(6)
Benchmarking Methodology
Benchmarking Methodology
I
ON= I
DSat | V
DS| = V
CCand | V
G–V
T| = 2 V
CC/ 3
I
OFF= I
DSat | V
DS| = V
CCand | V
G–V
T| = V
CC/ 3
Measure or estimate capacitance C
(7)
I ntrinsic Gate Delay CV/ I for PMOS
I ntrinsic Gate Delay CV/ I for PMOS
D = 1 to 2.5 nm D = 4 to 35 nm
CNT shows significant p-channel CV/ I improvement over Si
CNT has > 20x higher effective p-channel mobility than Si
(8)
Energy
Energy
-
-
Delay Product for PMOS
Delay Product for PMOS
CNT shows significant p-channel energy-delay product
improvement over Si due to higher effective p-channel
mobility than Si
(9)
Subthreshold Slope vs L
Subthreshold Slope vs L
G
G
for PMOS
for PMOS
Si Planar (VCC = 1.0-1.5V)
Si Tri-gate (VCC = 1.1V) CNTFETs
(VCC = 0.3-0.5V)
(10)
PMOS CV/ I versus I
PMOS CV/ I versus I
ON
ON
/ I
/ I
OFF
OFF
Ratio
Ratio
(Metal-CNT
source/drain contacts)
For ION/ IOFF < 100, CNT shows improvement over Si due to higher
(11)
Ambipolar Conduction: Parasitic Leakage in CNTs
Ambipolar Conduction: Parasitic Leakage in CNTs
CNTs use metal-CNT Schottky contacts to form source and drain,
which leads to ambipolar conduction
(12)
I ntrinsic Gate Delay CV/ I for NMOS
I ntrinsic Gate Delay CV/ I for NMOS
n-channel CNT not as well established as p-channel CNT
I I I -V (e.g. I nSb) devices show significant CV/ I improvement over Si
(13)
Energy
Energy
-
-
Delay Product for NMOS
Delay Product for NMOS
I I I -V (e.g. I nSb) devices show significant energy-delay product
improvement over Si due to > 50X higher effective mobility and
(14)
Subthreshold Slope vs L
Subthreshold Slope vs L
G
G
for NMOS
for NMOS
Si Planar (VCC = 1.0-1.5V)
Si Tri-gate (VCC = 1.1V) CNTFETs
(VCC = 0.3-0.5V)
Tri-gate
(15)
NMOS CV/ I versus I
NMOS CV/ I versus I
ON
ON
/ I
/ I
OFF
OFF
Ratio
Ratio
Chemically-doped junction delays ambipolar conduction Due to Schottky
gate leakage
Use of chemically-doped junctions delays the ambipolar conduction in
the CNTFET despite poor gate delay performance at present
(16)
Summary
Summary
Need to diligently benchmark emerging
nanoelectronic devices against state-of-the-art
Si data to
identify potential device strengths and shortcomings,
and
to gauge research progress
Emerging non-Si nanoelectronic devices show
both challenges and opportunities for future
logic transistor applications
(17)
References
References
R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A.
Majumdar, M. Metz, and M. Radosavljevic, “Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications”, I EEE Transactions on Nanotechnology, vol. 4, pp. 153-158, 2005.
R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J.
Kavalieros, B. Jin, M. Metz, A. Majumdar, and M. Radosavljevic, “Emerging Silicon and Non-Silicon Nanoelectronic Devices:
Opportunities and Challenges for Future High-Performance and Low-Power Computational Applications”, Proceedings of Technical Papers, 2005 I EEE VLSI -TSA I nternational Symposium on VLSI Technology, Hsinchu, Taiwan, pp. 13-16, April 25-27, 2005.
(1)
I ntrinsic Gate Delay CV/ I for NMOS
I ntrinsic Gate Delay CV/ I for NMOS
n-channel CNT not as well established as p-channel CNT
I I I -V (e.g. I nSb) devices show significant CV/ I improvement over Si
I I I -V devices have > 50X higher effective n-ch mobility than Si I I I -V devices operated at low VCC = 0.5V
(2)
Energy
(3)
Subthreshold Slope vs L
Subthreshold Slope vs L
G
G
for NMOS
for NMOS
Si Planar (VCC = 1.0-1.5V) Si Tri-gate (VCC = 1.1V) CNTFETs
(VCC = 0.3-0.5V)
Tri-gate
(4)
NMOS CV/ I versus I
NMOS CV/ I versus I
ON
ON
/ I
/ I
OFF
OFF
Ratio
Ratio
Chemically-doped junction delays ambipolar conduction Due to Schottky
(5)
Summary
Summary
Need to diligently benchmark emerging
nanoelectronic devices against state-of-the-art
Si data to
identify potential device strengths and shortcomings,
and
to gauge research progress
Emerging non-Si nanoelectronic devices show
both challenges and opportunities for future
logic transistor applications
(6)
References
References
R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A.
Majumdar, M. Metz, and M. Radosavljevic, “Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications”, I EEE Transactions on Nanotechnology, vol. 4, pp. 153-158, 2005.
R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J.
Kavalieros, B. Jin, M. Metz, A. Majumdar, and M. Radosavljevic, “Emerging Silicon and Non-Silicon Nanoelectronic Devices:
Opportunities and Challenges for Future High-Performance and Low-Power Computational Applications”, Proceedings of Technical Papers, 2005 I EEE VLSI -TSA I nternational Symposium on VLSI Technology, Hsinchu, Taiwan, pp. 13-16, April 25-27, 2005.