Power MOSFET IRFP460, SiHFP460

  IRFP460, SiHFP460 Vishay Siliconix

   Power MOSFET FEATURES PRODUCT SUMMARY

• Dynamic dV/dt Rating

  V (V) 500

  DS Available

• Repetitive Avalanche Rated

  R (Ω) V = 10 V

  0.27 DS(on) GS

  RoHS*

• Isolated Central Mounting Hole

  Q (Max.) (nC) 210

  g COMPLIANT

  Q (nC) 29 • Fast Switching

  gs

  Q (nC) 110

  gd

• Ease of Paralleling

  Configuration Single

• Simple Drive Requirements

  D

• Lead (Pb)-free Available

  TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,

  G ruggedized device design, low on-resistance and cost-effectiveness.

  S

  The TO-247 package is preferred for commercial-industrial

  D

  S

  G applications where higher power levels preclude the use of

  TO-220 devices. The TO-247 is similar but superior to the N

• Channel MOSFET earlier TO-218 package because its isolated mounting hole.

  It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

  Package TO-247

  IRFP460PbF Lead (Pb)-free

  SiHFP460-E3

  IRFP460 SnPb

  SiHFP460

  ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

  C

PARAMETER SYMBOL LIMIT UNIT

  Drain-Source Voltage

  V DS 500

  V Gate-Source Voltage V ±

  20 GS T C = 25 °C

  20 Continuous Drain Current V at 10 V

  I GS D T = 100 °C

  13 A

  C a

  Pulsed Drain Current

  I DM

  80 Linear Derating Factor

  2.2 W/°C

  b

  Single Pulse Avalanche Energy E AS 960 mJ

  a

  Repetitive Avalanche Current

  I

  20 A

  AR a

  Repetitive Avalanche Energy E AR 28 mJ

  Maximum Power Dissipation T = 25 °C P 280 W

  C D c

  Peak Diode Recovery dV/dt dV/dt 3.5 V/ns

  Operating Junction and Storage Temperature Range T , T - 55 to + 150

  J stg

  °C

  d

  Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw

  1.1 N · m

  Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

  b. V DD = 50 V, starting T J = 25 °C, L = 4.3 mH, R G = 25 Ω, I AS = 20 A (see fig. 12).

  c. I SD ≤ 20 A, dI/dt ≤ 160 A/µs, V DD ≤ V DS , T J ≤ 150 °C.

  d. 1.6 mm from case.

• Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91237

  www.vishay.com

  IRFP460, SiHFP460 Vishay Siliconix

  THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT

  Maximum Junction-to-Ambient - R

  40

  thJA

  Case-to-Sink, Flat, Greased Surface 0.24 °C/W - R thCS

• Maximum Junction-to-Case (Drain) R

  0.45

  thJC SPECIFICATIONS T = 25 °C, unless otherwise noted

  J

  

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

  V = 0 V, I = 250 µA 500 - Drain-Source Breakdown Voltage

• V

  DS GS D

  V V Temperature Coefficient ΔV /T Reference to 25 °C, I = 1 mA - -

  0.63 DS DS J D V/°C Gate-Source Threshold Voltage

  V V - = V , I = 250 µA

  2.0

  4.0 V

  GS(th) DS GS D

  Gate-Source Leakage

  I V = ± 20 V ± 100 nA - -

GSS GS

  V = 500 V, V = 0 V - 25 -

DS GS

  Zero Gate Voltage Drain Current

  I DSS µA

  V - - = 400 V, V = 0 V, T = 125 °C 250

  DS GS J b

  Drain-Source On-State Resistance R V = 10 V I = 12 A - 0.27 Ω

• DS(on) GS D

  b

  Forward Transconductance g V - = 50 V, I = 12 A

  13 S -

  fs DS D Dynamic

  4200 - - Input Capacitance C

  iss

  V GS = 0 V,

• C

  V DS = 25 V, 870 pF - Output Capacitance oss f = 1.0 MHz, see fig. 5 350 - - Reverse Transfer Capacitance C

  rss

  Total Gate Charge

• Q

  210

  g

  I D = 20 A, V DS = 400 V Gate-Source Charge Q V = 10 V - - 29 nC

  gs GS b

  see fig. 6 and 13 Gate-Drain Charge Q - - 110

  gd

• Turn-On Delay Time

  18 - t

  d(on)

  Rise Time 59 - - t r

  V = 250 V, I = 20 A ,

  DD D

  ns

  b

  Turn-Off Delay Time t - - R = 4.3 Ω, R = 13 Ω, see fig. 10 110

  d(off) G D

  Fall Time 58 - - t

  f _D

  Between lead, L

• Internal Drain Inductance

  5.0 D 6 mm (0.25") from _G nH package and center of

• Internal Source Inductance L

  13 -

  S die contact _S Drain-Source Body Diode Characteristics

  MOSFET symbol _D Continuous Source-Drain Diode Current

  I

• 20 -

  S

  showing the _G A integral reverse

  a

  I SM p - n junction diode S - - Pulsed Diode Forward Current

  80

  b

  Body Diode Voltage

  V T = 25 °C, I = 20 A, V - = 0 V

  1.8 V -

  SD J S GS

  t Body Diode Reverse Recovery Time 570 -

  860 ns

  rr b

  T = 25 °C, I = 20A, dI/dt = 100 A/µs

  

J F

• Body Diode Reverse Recovery Charge Q

  5.7 8.6 µC

  rr

  Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )

  on S D

  Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

  b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com

  Document Number: 91237

  IRFP460, SiHFP460 Vishay Siliconix

  TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

  V _GS Top

15 V

  10 V .0 V

  8

  7.0 V 150 C

  °

  6.0 V

  5.5 V

  5.0 V Bottom

  4.5 V rrent (A) rrent (A)

  1

  10 u u

  1

  10 25 ° C ain C ain C

4.5 V

  , Dr , Dr D D

  I I 20 µs Pulse Width 20 µs Pulse Width V =

  50 V

  10 DS T = 25 °C

  C

  10

  1

  8

  10

  4

  5

  6

  7

  9

  10

  10 91237_01

  V 91237_03

  V Gate-to-Source Voltage (V) , Drain-to-Source Voltage (V) DS

  GS, Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 3 - Typical Transfer Characteristics C

  3.5 V I = 20 A

  GS D

  15 V = 10 V

  V Top

  GS

  3.0

  10 V

  8 .0 V

  7.0 V

  2.5

  6.0 V

  4.5 V

  1

  5.5 V ed)

  2.0

  10 rrent (A) rce On Resistance u

  5.0 V u

  Bottom

  4.5 V maliz

  1.5 or ain C (N , Dr

  1.0 D ain-to-So

  I , Dr

  0.5 20 µs Pulse Width T = 150 °C

  C DS(on)

  0.0

10 R

  1

  10

10 - 60 - 40 - 20 0 20

40 60 80 100 120 140 160 91237_02

  V Drain-to-Source Voltage (V) 91237_04 T Junction Temperature (°C) DS,

  J,

Fig. 2 - Typical Output Characteristics, T C = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

  Document Number: 91237 www.vishay.com

• C
• C

  DS(on) T C

  5

  2

  3

  10

  I D , Dr ain C u rrent (A)

  = 150 °C Single Pulse

  = 25 °C T J

  1 ms 10 ms Operation in this area limited b y R

  5

  µ s

  100

  µ s

  10

  2.0 91237_08

  1.8

  1

  2

  2

  V GS = 0 V

  2

  2

  10

  10

  1

  5

  2

  5

  5

  5 V DS , Drain-to-Source Voltage (V)

  2

  3

  10

  2

  10

  10

  1

  10

  1.4 25 ° C 150 ° C

  gd 91237_06

  C oss

  = C ds

  C oss

  = C gd

  Shorted C rss

  gd , C ds

  = C gs

  V GS = 0 V, f = 1 MHz C iss

  C rss

  I D = 20 A

  V DS, Drain-to-Source Voltage (V) C iss

  10

  10

  8 000 6000 4000 2000

  10 000

  Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 91237_05

  IRFP460, SiHFP460 Vishay Siliconix

1 Capacitance (pF)

  www.vishay.com Document Number: 91237

  1.6

  8 91237_07

  0.8

  1.0

  1.2

  0.6

  I SD , Re verse Dr ain C u rrent (A)

  2 V SD , Source-to-Drain Voltage (V)

  10

  40 200 160 120

  V DS = 100 V

  4

  8

  12

  16

  20

  V GS , Gate-to-So u rce V oltage ( V )

  Q G , Total Gate Charge (nC)

  V DS = 400 V

  V DS = 250 V For test circuit see figure 13

0.02 Ther

• 2

  0.1

  C

  mal Response (Z ^th JC

  )

  1

  0.1

  10

  t

  1

, Rectangular Pulse Duration (S)

  10

  10

  10

  10

  10

  1

  2. Peak T j

  10

  R G

  I AS 0.01 Ω t p

  D.U.T L

  V DS

  V DD A

  V ary t p to obtain required I

  AS

  I AS

  V DS

  V DD

  V DS t p

  = P DM x Z thJC

  1 /t

  2

  91237_09 Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

  Document Number: 91237 www.vishay.com

  IRFP460, SiHFP460 Vishay Siliconix

  Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms

Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case

  

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

  I D , Dr ain C u rrent (A)

  T C , Case Temperature (°C)

  8

  12

  16

  20 25 150 125 100

  75

  50

  4

  R D

  V GS R G D.U.T.

  10 V

  V DS

  V DD

  V DS 90 % 10 %

  V GS t d(on) t r t d(off) t f

• T
• 3
• 5
• 4
• 3
• 2

  91237_11 0 - 0.5

  0.2

  0.1

  0.05

  0.01 Single Pulse (Thermal Response) P DM t

  1 t

  2 N otes:

  1. Duty Factor, D = t

10 V

  50 Starting T

  8

  V G Charge

  Q GS Q GD Q G

  E AS , Single P u lse Energy (mJ)

  , Junction Temperature (°C)

  J

  75

  00 1200 1600 2000 25 150 125 100

  2400 400

  50 kΩ

  V DD = 50 V

  20 A

  13 A

  8 .9 A

  I D

  91237_12c Bottom Top

  

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

  IRFP460, SiHFP460 Vishay Siliconix

10 V D.U.T.

  Current regulator Current sampling resistors Same type as D.U.T.

12 V

  V DS

  I G

  I D 0.3 µF 0.2 µF

  V GS

  3 mA

  www.vishay.com Document Number: 91237

  IRFP460, SiHFP460 Vishay Siliconix

  Peak Diode Recovery dV/dt Test Circuit Circuit layout considerations + D.U.T.

• Low stray inductance
• Ground plane
• Low leakage inductance current transformer
• R

  G

• • dV/dt controlled by R

  + G

  V • Driver same type as D.U.T.

  DD

• I controlled by duty factor "D"

  SD

• D.U.T. - device under test

  Driver gate drive P.W.

  Period D = Period

P.W.

  V = 10 V* GS w D.U.T. I aveform

  SD Reverse recovery Body diode forward current current dI/dt w D.U.T. V aveform

  DS Diode recovery dV/dt

  V DD Re-applied v oltage

  Body diode forward drop Inductor current

  I SD Ripple ≤ 5 %

• V = 5 V for logic level devices

  GS

Fig. 14 - For N-Channel

  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91237.

  Document Number: 91237 www.vishay.com

  Package Information www.vishay.com

  D2 D D E E C C View B

  R/2 B 2 x R

  S D See view B 2 x e b4 3 x b

  2 x b2 L C L1

  1

  2

  3 Q D A A2 A A A1 C Ø k B D M M

  A ØP (Datum B)

  ØP1 D1

  4 E1

  0.01 B D

  M M

  View A - A Thermal pad

  (b1, b3, b5) Base metal c1

  E E/2

  (b, b2, b4) Section C - C, D - D, E - E

  (c) Planting

  4

  3

  5

  7

  4

  4

  4 Lead Assignments

  1. Gate

  2. Drain

  3. Source

  (2) (4)

  M M

  Vishay Siliconix

  INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A

  Revision: 01-Jul-13

  1 Document Number: 91360 For technical questions, contact: hvm@vishay.com

  

TO-247AC (High Voltage)

  Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994.

  2. Contour of slot optional.

  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.

  4. Thermal pad contour optional with dimensions D1 and E1.

  5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

  7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

  8. Xian and Mingxin actually photo.

  MILLIMETERS

  INCHES MILLIMETERS

  4.58 5.31 0.180 0.209 D2

  0.10 A C

  0.51 1.30 0.020 0.051 A1

  2.21 2.59 0.087 0.102 E

  15.29 15.87 0.602 0.625 A2

  1.17 2.49 0.046 0.098 E1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e

  5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010 b2 1.53 2.39 0.060 0.094 L

  14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 L1

  3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 N

  7.62 BSC 0.300 BSC b5 2.59 3.38 0.102 0.133 Ø P

  3.51 3.66 0.138 0.144 c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 Q

  5.31 5.69 0.209 0.224 D

  19.71 20.82 0.776 0.820 R

  4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - S

  5.51 BSC 0.217 BSC ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971

  4. Drain

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

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including but not limited to the warranty expressed therein.

  

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  1 Revision: 13-Jun-16 Document Number: 91000