Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept
8 8
C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003
Silicon Scaling Leads to Material Silicon Scaling Leads to Material
Challenges Challenges
• •
Lithography Lithography
• •
Transistors Transistors
• •
Interconnects Interconnects
• •
Package Package
9 9
C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003
PPT Shrink Source: Intel
Material Challenges Material Challenges
50nm
Print Features Print Features
Line Edge RoughnessLER Line Edge RoughnessLER
10nm 10nm
Resist Nano-domains Resist Nano-domains
Low K Interlevel Dielectric Micelle Assembled….
Low K Interlevel Dielectric Micelle Assembled….
Barrier
Layer ~20nm
Barrier
Layer ~20nm
What Device Next? What Materials?
How to Assemble?
What Device Next? What Device Next?
What Materials? What Materials?
How to Assemble? How to Assemble?
Materials Challenges Everywhere Materials Challenges Everywhere
10 10
C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003
Nanotech Nanotech
Building Blocks Building Blocks
Sub 100nm particles Sub 100nm particles
c. Molecular Assembly directed and self assembly
c. Molecular Assembly directed and self assembly
Macromolecules Macromolecules
10nm 10nm
Sub 100nm structures Sub 100nm structures
11 11
C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003
Lithography Challenges Lithography Challenges
1000 1000
100 100
10 10
’89 ’89
’91 ’91
’93 ’93
’95 ’95
’97 ’97
’99 ’99
’01 ’01
’03 ’03
’05 ’05
’07 ’07
’09 ’09
’11 ’11
Initial Production Initial Production
Feature size Feature size
13nm EUVL 13nm EUVL
Lithography Lithography
Wavelength Wavelength
193nm 193nm
248nm 248nm
Gap Gap
nm
New Mask, Design Techniques, and Materials Needed to Support future Lithography Scaling
New Mask, Design Techniques, and Materials Needed to Support future Lithography Scaling
12 12
C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003
Future Lithography Resist Challenges Future Lithography Resist Challenges
Line Edge RoughnessLER Atomic Force Microscope
Picture of Resist Nano-domains Atomic Force Microscope
Picture of Resist Nano-domains
Line Edge RoughnessLER
•Resist nano-domains limiting feature resolution and defects.
•Requires control at the molecular level
•Resist nano-domains limiting feature resolution and defects.
•Requires control at the molecular level
13 13
C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003