Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept.16, 2003 Michael Garner Sept

8 8 C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003 Silicon Scaling Leads to Material Silicon Scaling Leads to Material Challenges Challenges • • Lithography Lithography • • Transistors Transistors • • Interconnects Interconnects • • Package Package 9 9 C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003 PPT Shrink Source: Intel Material Challenges Material Challenges 50nm Print Features Print Features Line Edge RoughnessLER Line Edge RoughnessLER 10nm 10nm Resist Nano-domains Resist Nano-domains Low K Interlevel Dielectric Micelle Assembled…. Low K Interlevel Dielectric Micelle Assembled…. Barrier Layer ~20nm Barrier Layer ~20nm What Device Next? What Materials? How to Assemble? What Device Next? What Device Next? What Materials? What Materials? How to Assemble? How to Assemble? Materials Challenges Everywhere Materials Challenges Everywhere 10 10 C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003 Nanotech Nanotech Building Blocks Building Blocks Sub 100nm particles Sub 100nm particles c. Molecular Assembly directed and self assembly c. Molecular Assembly directed and self assembly Macromolecules Macromolecules 10nm 10nm Sub 100nm structures Sub 100nm structures 11 11 C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003 Lithography Challenges Lithography Challenges 1000 1000 100 100 10 10 ’89 ’89 ’91 ’91 ’93 ’93 ’95 ’95 ’97 ’97 ’99 ’99 ’01 ’01 ’03 ’03 ’05 ’05 ’07 ’07 ’09 ’09 ’11 ’11 Initial Production Initial Production Feature size Feature size 13nm EUVL 13nm EUVL Lithography Lithography Wavelength Wavelength 193nm 193nm 248nm 248nm Gap Gap nm New Mask, Design Techniques, and Materials Needed to Support future Lithography Scaling New Mask, Design Techniques, and Materials Needed to Support future Lithography Scaling 12 12 C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003 Future Lithography Resist Challenges Future Lithography Resist Challenges Line Edge RoughnessLER Atomic Force Microscope Picture of Resist Nano-domains Atomic Force Microscope Picture of Resist Nano-domains Line Edge RoughnessLER •Resist nano-domains limiting feature resolution and defects. •Requires control at the molecular level •Resist nano-domains limiting feature resolution and defects. •Requires control at the molecular level 13 13 C. Michael Garner Sept.16, 2003 C. Michael Garner Sept.16, 2003