Chau DRC 062303 foils
1
Silicon Nano-Transistors and Breaking
the 10nm Physical Gate Length Barrier
Robert Chau, Brian Doyle, Mark Doczy,
Suman Datta, Scott Hareland, Ben Jin,
Jack Kavalieros and Matthew Metz
Components Research
Logic Technology Development
Intel Corporation
June 24 2003
(2)
2
Content
•
Introduction
•
Device Scaling trends and the 10nm L
Gbarrier
•
New Device Structures
•
Gate Dielectric Scaling
(3)
3
Moore’s Law Continues…
– Transistor # doubling every 2 years toward the 1 billion transistor microprocessor
1,000 10,000 100,000 1,000,000 10,000,000 100,000,000 1,000,000,000
1970 1980 1990 2000 2010
4004
8080 8086
8008
Pentium® Processor 486™ DX Processor
386™ Processor 286
Pentium® II Processor Pentium® III Processor
Pentium® 4 Processor
Heading toward 1 billion transistors in 2007
42 Million
(4)
4
Transistor Physical Gate Length Requirement
0.01 0.10 1.00
1990 1995 2000 2005 2010
Year
Mi
c
ro
n
Technology Node
Transistor Physical Gate
Length
0.5µm
0.35µm
0.25µm
0.18µm
0.13µm
90nm
65nm
45nm
30nm
130nm
70nm
50nm
30nm
20nm 15nm 0.2µm
Transistor physical gate length will reach ~15nm before end of this decade, and ~10nm early next decade
(5)
5
Conventional Si Transistor Scaling
60nm
Lg = 30nm
LG= 10nm
65nm Node
45nm node
(6)
6
Content
• Introduction
•
Device Scaling trends and the 10nm L
Gbarrier
• New Device Structures
• Gate Dielectric Scaling
• Summary
(7)
7
Gate Delay and Energy-Delay Trends
1.E-02 1.E-01 1.E+00 1.E+01
0.001 0.01 0.1 1
LG (µm)
G a te D e la y (p s ) 10nm 20nm 15nm 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
0.001 0.01 0.1 1
LG (µm)
E n e rg y -D el ay P ro d u c t (x 10 -2 7 j o ul es .s ec ) 20nm 10nm 15nm
Data from 20nm, 15nm and 10nm research transistors follow the projected trends
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8
Experimental 15nm Si Nano-Transistor
0 100 200 300 400 500
0 0.2 0.4 0.6 0.8
Drain Voltage (V)
Drain Current (µ A /µ m )
Vg = 0.8V
0.7V 0.6V 0.5V 0.4V 0.3V 15nm NMOS 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03
0 0.2 0.4 0.6 0.8
Gate Voltage (V)
Drain Current (A/
µ
m)
Vd = 0.8V
Vd = 0.05V
S.S. = 95mV/decade DIBL = 100mV/V Ioff = 180nA/um 15nm NMOS
• Electrostatics of 15nm transistor remains intact
• Idsat performance can be further improved using thinner Toxe and various enhancement techniques
(9)
9
Experimental 10nm MOS Transistor
LG = 10nm 0
200 400 600
0 0.2 0.4 0.6 0.8
Drain Voltage (V)
Drain Current (A/
µ
m)
0
0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.60.6 0.8
0.75V 0.65V 0.55V 0.45V 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03
-0.3 0.0 0.3 0.6 0.9 Gate Voltage (V)
Id ( A /¬ m) `
•
10nm transistor shows degraded short channel performance− high Ioff
0.75V 0.05V
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10
Transistor Off-state Leakage Trend
1.E-14 1.E-12 1.E-10 1.E-08 1.E-06 1.E-04
10 100 1000
Lg (nm)
Ioff
(A/um)
Intel 10nm device
Intel 15nm device Production Data
(11)
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Leakage Power is becoming a
Larger % of Total Chip Power
-Total Power (Watts)
10
100
1,000
0.25u 0.18u 0.13u 90nm 65nm 45nm
Off-State Leakage Active Power
2V 1.7V 1.5V 1.2V 1V 0.9V
Total Power (Watts)
10
100
1,000
0.25u 0.18u 0.13u 90nm 65nm 45nm
Off-State Leakage Power Active Power
2V 1.7V 1.5V 1.2V 1V 0.9V
-Reference: V. De and S. Borkar, “Technology and Design Challenges for Low Power and High Performance,” 1999 ISLPED, pp. 163-168, August 1999.
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Potential Solutions to Transistor
I
off
Problem
•
Low-temperature operation
•
Improve short-channel performance
(subthreshold slope & DIBL) using
novel device structures
–
Fully-Depleted Transistors
•
Single-gate planar fully depleted SOI
•
Double-gate FINFET
(13)
13
Content
• Introduction
• Device Scaling trends and the 10nm L
Gbarrier
•
New Device Structures
• Gate Dielectric Scaling
• Summary
(14)
14
Si TSi
Lg
Si T
Planar fully depleted SOI
Fully Depleted Transistors
Double-gate (e.g. FINFET)
W
SiL
gTSi
Isolation
(Non-Planar)
(Planar)
W
SiL
gT
SiTri-gate
(Non-Planar)
• Fully depleted transistors provide better short channel performance (steeper subthreshold slope and smaller DIBL)
(15)
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Planar Fully Depleted Transistors
Si TSi
L
g
Si
SiO2
T
1E-09 1E-08 1E-07 1E-06 1E-05 1E-04 1E-03
0 0.25 0.5 0.75 1 1.25
VG (Volts)
ID
(A/
µ
m)
DST
Bulk Silicon
VD = 1.3V
VD = 0.05V
FD-SOI
Planar Fully Depleted SOI
• Fully depleted SOI provides steeper subthreshold slope
and better DIBL, which can be used to reduce Ioff or increase Idsat
• Cost and controllability of thin Si (TSi) layer are key manufacturing problems
(16)
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Planar Fully-depleted SOI
Lg = 60nm
Epi Raised S-D
T
Si~18 nm
Silicide
BOX
Raised S-D using Selective Epi-Si Deposition
(17)
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Tri-gate Transistor
WSi
L
gTop Gate
Side Gate Side Gate
T
Si S/DD/S
Gate
Top Gate Side Gate
Side Gate
Body controlled on three sides by adjacent
Gates: Excellent electrostatic control of body
(18)
18
Si TSi
Lg Si T WSi
L
g TSi WSi Lg TSi0 20 40 60 80
Device Gate Length, Lg (nm)
Silicon Body Thickness
(nm
)
Single-Gate
Double-Tri-Gate
0 20 40 60 80
Single- Gate
Tri-Gate
0 20 40 60 80
-0 10 20 30 40 50
0 20 40 60 80
Double-Gate
-60
(TSi) (WSi) (TSi, WSi)
3X
1.5X
Tri-gate has the Least Stringent Thickness
& Width Requirements
(19)
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VG(Volts)
1E 09 1E-08 1E-07 1E-06 1E-05 1E-04 1E-03
-1.4 -1 -0.6 0.6 1 1.4
I d
(|A/
µ
m|)
Vd=-0.05V Vd= 0.05V
Vd=1.3V
-0.2 0.2
nMOS pMOS
Vd=-1.3V
Non-Planar Tri-Gate CMOS Transistor
Silicon Body Buried Oxide 36 nm 55 nm Poly
Lg = 60nm
Silicon Body Buried Oxide 36 nm 55 nm Poly
Lg = 60nm
LG = 60nm
Lg = 60nm
TSi= 36 nm
WSi= 55 nm
Current per unit width = Id/(2*TSi+WSi)
DIBL < 50mV/V, S.S. ~ 69mV/decade
•
Excellent electrostatics and good device
performance
(20)
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Tri-Gate Device Physics
•
Three distinct regions of operation
Oxide
Top channel
Sidewall channel
Corners
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Components of Current in Tri-Gate
Vg (V)
Id (A/
µ
m)
1.0E-09
01.0E-8
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0.0
0.2
0.4
0.6
0.8
1.0
Non-Corner
Total
Corner
Vd=1.0V
Vd=0.05V
Corner device shows much improved ∆S & DIBL over non-corner devices because of proximity of adjacent gates
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Physics of Corner Device
Vg=0.5V, Vd=1.0V Cut at midpoint along channel
Proximity of the two gates at the corner give the
nearly-ideal characteristics of the corner device, and the high current density
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Tri-Gate Architecture
Gate Si Legs
Gate
Silicon Legs
S D
G
MultipleLegs
Total Drive Current =
Id per Tri-gate Transistor x no. of Legs
S D
G
Source
Drain Gate
•
Tri-Gate architecture compatible with future devices such as nanowires and nanotubes(24)
24
Nano-Device Structure Evolution
Gate
Nanowire
Non-Planar Tri-gate
Gate
GateGate
Silicon Substrate
SiO2
SiO2
Gate
Silicon Substrate
SiO2
SiO2
Planar Transistor
S D
G
Gate
(25)
25
Content
• Introduction
• Device Scaling trends and the 10nm L
Gbarrier
• New Device Structures
•
Gate Dielectric Scaling
• Summary
(26)
26
SiO2 Less Than 3 Atomic layers Thick
PolySi
Silicon PolySi
Silicon
SiO2
•
SiO2 leakage is increasing with reducing thickness•
SiO2 gate oxide running out of atoms for further scaling 0.00.5 1.0 1.5 2.0
-1 -0.5 0 0.5 1
Vg C a pacita nce ( µ F/cm²) NMOS PMOS NMOS PMOS --0.0 0.5 1.0 1.5 2.0
-1 -0.5 0 0.5 1
Vg (V) Capacit a nce ( µ F/cm²) NMOS PMOS NMOS PMOS 0.8nm 0.8nm Inversion Capacitance
(27)
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Alternative Gate Dielectric Required for
Future-Generation Si Nano-Transistors
1.E-06 1.E-04 1.E-02 1.E+00 1.E+02 1.E+04
5 10 15 20 25
EOT [A]
J
ox
[A/cm
2 ]
SiO2 Dielectric
High-K
Dielectric
(28)
28
NMOS: Ft = 83GHz Fmax = 35GHz
PMOS: Ft = 41GHz Fmax = 25GHz
Si CMOS Transistor with Alternative
Gate Dielectrics
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0-1.5 -1 -0.5 0 0.5 1 1.5
Vds (V)
Ids
(mA/
µ
m)
Vgs-Vth= 1.25V
Vgs-Vth= 0.75V
Vgs-Vth= 0.25V Vgs-Vth= -1.25V
Vgs-Vth= -0.75V Vgs-Vth= -0.25V
PMOS NMOS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-1.5 -1 -0.5 0 0.5 1 1.5
Vds (V)
Ids
(mA/
µ
m)
Vgs-Vth= 1.25V
Vgs-Vth= 0.75V
Vgs-Vth= 0.25V Vgs-Vth= -1.25V
Vgs-Vth= -0.75V Vgs-Vth= -0.25V
PMOS NMOS
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Summary
• Research Si nano-transistors down to 10nm physical LG
have been demonstrated with improved intrinsic gate delay and energy-delay trends over devices with longer LG
• Transistor off-state leakage increases with reducing
physical LG, and will need to be reduced for future logic products
– 10nm research transistor exhibits degraded short channel performance and high off-state leakage
• Gate oxide leakage is increasing with reducing thickness and SiO2 is running out of atoms for further scaling
• The short-channel performance and off-state leakage of future Si nano-transistors will be improved using new transistor structure such as Tri-gate, and the gate oxide leakage will be reduced using alternative gate stacks
(1)
Nano-Device Structure Evolution
Gate
Nanowire
Non-Planar Tri-gate
GateGateGate
SiO2
SiO2
Gate
SiO2
SiO2
S D
G
(2)
Content
• Introduction
• Device Scaling trends and the 10nm L
Gbarrier
• New Device Structures
•
Gate Dielectric Scaling
(3)
SiO2 Less Than 3 Atomic layers Thick
PolySi
Silicon
PolySi
Silicon
SiO2
0.0 0.5 1.0 1.5 2.0-1 -0.5 0 0.5 1
Vg C a pacita nce ( µ F/cm²) NMOS PMOS NMOS PMOS --0.0 0.5 1.0 1.5 2.0
-1 -0.5 0 0.5 1
Vg (V) Capacit a nce ( µ F/cm²) NMOS PMOS NMOS PMOS 0.8nm 0.8nm Inversion Capacitance
(4)
Alternative Gate Dielectric Required for
Future-Generation Si Nano-Transistors
1.E-06 1.E-04 1.E-02 1.E+00 1.E+02 1.E+04
5 10 15 20 25
EOT [A]
J
ox
[A/cm
2 ]
SiO2 Dielectric
High-K
Dielectric
(5)
Si CMOS Transistor with Alternative
Gate Dielectrics
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0-1.5 -1 -0.5 0 0.5 1 1.5
Vds (V)
Ids
(mA/
µ
m)
Vgs-Vth= 1.25V
Vgs-Vth= 0.75V
Vgs-Vth= 0.25V
Vgs-Vth= -1.25V
Vgs-Vth= -0.75V
Vgs-Vth= -0.25V
PMOS NMOS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-1.5 -1 -0.5 0 0.5 1 1.5
Vds (V)
Ids
(mA/
µ
m)
Vgs-Vth= 1.25V
Vgs-Vth= 0.75V
Vgs-Vth= 0.25V
Vgs-Vth= -1.25V
Vgs-Vth= -0.75V
Vgs-Vth= -0.25V
PMOS NMOS
(6)
Summary
• Research Si nano-transistors down to 10nm physical LG
have been demonstrated with improved intrinsic gate delay
and energy-delay trends over devices with longer LG
• Transistor off-state leakage increases with reducing
physical LG, and will need to be reduced for future logic
products
– 10nm research transistor exhibits degraded short
channel performance and high off-state leakage
• Gate oxide leakage is increasing with reducing thickness
and SiO2 is running out of atoms for further scaling
• The short-channel performance and off-state leakage of
future Si nano-transistors will be improved using new transistor structure such as Tri-gate, and the gate oxide leakage will be reduced using alternative gate stacks