1 Power efficient scalingdesign Power efficient scalingdesign

0.1 1

10 100 1 10 100 1000 10000 GATE LENGTH L G [ nm] G A T E D E L A Y C V I [ p s ] Si MOSFETs CNT FETs I I I - V FETs NMOS Benchmarking Benchmarking Nanotransistor Nanotransistor Progress Progress Source: Intel compilation of published data Source: Intel compilation of published data Lithography Must Break Through Lithography Must Break Through to Shorter Wavelength EUV 13.5nm to Shorter Wavelength EUV 13.5nm Extreme Ultraviolet Extreme Ultraviolet 1000 1000 100 100 10 10 ’ ’ 89 89 ’ ’ 91 91 ’ ’ 93 93 ’ ’ 95 95 ’ ’ 97 97 ’ ’ 99 99 ’ ’ 01 01 ’ ’ 03 03 ’ ’ 05 05 ’ ’ 07 07 ’ ’ 09 09 ’ ’ 11 11 Feature size Feature size EU V EU V Lithography Lithography Wavelength Wavelength 193nm extensions 193nm extensions 248nm 248nm nm nm Gap Gap Source: Intel Lithography Must Break Through Lithography Must Break Through to Shorter Wavelength EUV 13.5nm to Shorter Wavelength EUV 13.5nm Extreme Ultraviolet Extreme Ultraviolet Source: Intel 1000 1000 100 100 10 10 ’ ’ 89 89 ’ ’ 91 91 ’ ’ 93 93 ’ ’ 95 95 ’ ’ 97 97 ’ ’ 99 99 ’ ’ 01 01 ’ ’ 03 03 ’ ’ 05 05 ’ ’ 07 07 ’ ’ 09 09 ’ ’ 11 11 Feature size Feature size EU V EU V Lithography Lithography Wavelength Wavelength 193nm extensions 193nm extensions 248nm 248nm nm nm Gap Gap EUV LLC EUV LLC Prototype EUV Tool Demonstrated Prototype EUV Tool Demonstrated EUV LLC invested heavily to spur innovation EUV LLC invested heavily to spur innovation EUV Lithography in EUV Lithography in Commercial Development Commercial Development EUV Micro exposure tool MET EUV Micro exposure tool MET EUV MET Image 804 EUV MET Image 804 Integrated development in progress Integrated development in progress y y Source power and lifetime Source power and lifetime y y Defect free mask fabrication and handling Defect free mask fabrication and handling y y Optics lifetime Optics lifetime y y Resist performance Resist performance Source: Intel EUV Source Power Increased EUV Source Power Increased 0.1 0.1 1 1 10 10 100 100 1000 1000 Jul Jul - - 01 01 Jan Jan - - 02 02 Jul Jul - - 02 02 Jan Jan - - 03 03 Jul Jul - - 03 03 Jan Jan - - 04 04 Jul Jul - - 04 04 Jan Jan - - 05 05 Jul Jul - - 05 05 Jan Jan - - 06 06 EUV Power at Intermediate Focus [W] EUV Power at Intermediate Focus [W] 115 W Production Requirement 115 W Production Requirement Exponential fit to data Exponential fit to data Average of reported data Average of reported data SEMATECH Source Workshops SEMATECH Source Workshops Source: SEMATECH EUV Mask Blank Defects Reduced EUV Mask Blank Defects Reduced Results from SEMATECH Results from SEMATECH Source: SEMATECH 0.001 0.01