µm 200mm µm 300mm 1

8 Third party marks and brands are the property of their respective owners Intel Intel ’ ’ s 90nm Process Yi el d Improved s 90nm Process Yi el d Improved at Record Rate at Record Rate 1998 1998 1999 1999 2000 2000 2001 2001 2002 2002 2003 2003 2004 2004 Defect Defect Density Density log scale log scale 0.18µm 200mm

0.13 µm 200mm

0.13 µm 300mm

90nm 300mm Source: Intel 9 Third party marks and brands are the property of their respective owners Average Transistor Price by Year Average Transistor Price by Year Nearly 7 Orders Of Magnitude Reduction in PriceTransistor Nearly 7 Orders Of Magnitude Reduction in PriceTransistor 0.0000001 0.000001 0.00001 0.0001 0.001 0.01

0.1 1

10 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 00 02 100 Nanodollars per transistor Source: WSTSDataquestIntel, 304 Source: WSTSDataquestIntel, 304 10 Third party marks and brands are the property of their respective owners Si l i con Technol ogy Reaches Nanoscal e Si l i con Technol ogy Reaches Nanoscal e Micron Micron 10000 10000 1000 1000 100 100 10 10 10 10 1 1 0.1 0.1 0.01 0.01 Nano Nano - - meter meter Nanotechnology Nanotechnology 100nm 100nm 130nm 130nm 90nm 90nm 70nm 70nm 50nm 50nm Gate Length Gate Length 65nm 65nm 35nm 35nm 1970 1970 1980 1980 1990 1990 2000 2000 2010 2010 2020 2020 45nm 45nm 32nm 32nm 22nm 22nm 25nm 25nm 18nm 18nm 12nm 12nm 0.7X every 2 years Nominal feature size Nominal feature size Source: Intel Micron Micron 10000 10000 1000 1000 100 100 10 10 10 10 1 1 0.1 0.1 0.01 0.01 Nano Nano - - meter meter Nanotechnology Nanotechnology 100nm 100nm 130nm 130nm 90nm 90nm 70nm 70nm 50nm 50nm Gate Length Gate Length 65nm 65nm 35nm 35nm 1970 1970 1980 1980 1990 1990 2000 2000 2010 2010 2020 2020 45nm 45nm 32nm 32nm 22nm 22nm 25nm 25nm 18nm 18nm 12nm 12nm 0.7X every 2 years Nominal feature size Nominal feature size Source: Intel 11 Third party marks and brands are the property of their respective owners Li thography Must Break Through Li thography Must Break Through to Shorter Wavel ength EUV 13.5nm to Shorter Wavel ength EUV 13.5nm Extreme Ultraviolet Extreme Ultraviolet Source: Intel 1000 1000 100 100 10 10 ’ ’ 89 89 ’ ’ 91 91 ’ ’ 93 93 ’ ’ 95 95 ’ ’ 97 97 ’ ’ 99 99 ’ ’ 01 01 ’ ’ 03 03 ’ ’ 05 05 ’ ’ 07 07 ’ ’ 09 09 ’ ’ 11 11 Feature size Feature size EU V EU V Lithography Lithography Wavelength Wavelength 193nm extensions 193nm extensions 248nm 248nm nm nm Gap Gap Looking ahead 12 Third party marks and brands are the property of their respective owners Figure 14 Critical Level Resist Technology Potential Solutions Roadmap Semiconductor Industry Association. The National Technology Roadmap for Semiconductors, 1994 edition. SEMATECH:Austin, Tx, 1994. 1994 NTRS EUV F u r t h e r S t u d y R e q u i r e d L e a d i n g - E d g e P r o d u c t i o n P i l o t L i n e D e v e l o p m e n t M o s t L i k e l y P a t h B a c k U p 2 0 0 4 1 9 9 2 1 9 8 9 1 9 9 5 1 9 9 8 2 0 0 1 2 0 0 7 2 0 1 0 E n v i r o n m e n t , S a f e t y , a n d H e a l t h i m p a c t r e d u c t i o n : s a f e r s o l v e n t s , w a t e r s o l u b l e , d r y p r o c e s s i n g , e t c . H i g h s e n s i t i v i t y a l t e r n a t e c h e m i s t r i e s N o n - a c i d c a t a l y z e d 0 . 3 5 m m G e n e r a t i o n 2 4 8 n m D U V I - L i n e 0 . 2 5 u m G e n e r a t i o n 1 X X - r a y s i n g l e l a y e r 2 4 8 n m D U V w e n h a n c e m e n t s N a r r o w o p t i o n s t o o l - b a s e d 0 . 1 8 u m G e n e r a t i o n 2 4 8 n m s i n g l e l a y e r A R C 1 9 3 n m s i n g l e l a y e r A R C 1 X X - r a y s i n g l e l a y e r 1 9 3 n m s u r f a c e i m a g i n g N X I o n p r o j e c t i o n E U V 1 X X - r a y N a r r o w O p t i o n s t o o l - b a s e d N X E - b e a m p r o j e c t i o n N X I o n P r o j e c t i o n E - b e a m h i g h t h r o u g p u t 0 . 1 0 u m G e n e r a t i o n N X E - b e a m p r o j e c t i o n A d v a n c e d R e s i s t S y s t e m s 0 . 1 0 u m G e n e r a t i o n N a r r o w O p t i o n s t o o l - b a s e d 1 9 3 n m N X I o n P r o j e c t i o n E - b e a m h i g h t h r o u g p u t 1 X X - r a y N X E - b e a m p r o j e c t i o n RESIS T T E CH NOLOGY 2010 13 Third party marks and brands are the property of their respective owners EUV Li thography i n EUV Li thography i n Commerci al Devel opment Commerci al Devel opment EUV Micro exposure tool MET EUV Micro exposure tool MET EUV MET Image 804 EUV MET Image 804 Integrated development in progress Integrated development in progress y y Source power and lifetime Source power and lifetime y y Defect free mask fabrication and handling Defect free mask fabrication and handling y y Optics lifetime Optics lifetime y y Resist performance Resist performance Source: Intel Looking ahead 14 Third party marks and brands are the property of their respective owners EUV Source Power Increased EUV Source Power Increased 0.1 0.1 1 1 10 10 100 100 1000 1000 Jul Jul - - 01 01 Jan Jan - - 02 02 Jul Jul - - 02 02 Jan Jan - - 03 03 Jul Jul - - 03 03 Jan Jan - - 04 04 Jul Jul - - 04 04 Jan Jan - - 05 05 Jul Jul - - 05 05 Jan Jan - - 06 06 EUV Power at Intermediate Focus [W] EUV Power at Intermediate Focus [W] 115 W Production Requirement 115 W Production Requirement Exponential fit to data Exponential fit to data Average of reported data Average of reported data SEMATECH Source Workshops SEMATECH Source Workshops Source: SEMATECH Looking ahead 15